Abstract
C3N4 films have been synthesized on both Si and Ft substrates by microwave plasma chemical vapor deposition (MPCVD) method. X-ray spectra were calculated for single phase α-C3N4 and β-C3N4 respectively. The experimental X-ray spectra of films deposited on both Si and Pt substrates showed all the strong peaks of α-C3N4 and β-C3N4 so the films are mixtures of α-C3N4 and β-C3N4. The N/C atomic ratio is in the range of 1.0–2.0. X-ray photoelectron spectroscopy (XPS) analysis indicated that the binding energy of Is and N ls are 286.2 eV and 399.5 eV respectively, corresponding to polarized C-N bond. Fourier transform infrared absorption (FT-IR) and Raman spectra support the existence of C-N covalent bond in the films. Nano-indentation hardness tests showed that the bulk modulus of a film deposited on Pt is up to 349 GPa
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Gu, Y., Zhang, Y., Chang, X. et al. Synthesis and characterization of C3N4 hard films. Sci. China Ser. A-Math. 43, 185–198 (2000). https://doi.org/10.1007/BF02876045
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DOI: https://doi.org/10.1007/BF02876045