Abstract
Laser Raman spectroscopy was employed as a non-destructive probe for the detection and monitoring of crystalline arsenic in the native oxide films formed during heating of GaAs in air at various temperatures. Spectroscopy of oxide films formed after successive heating and etching treatments could confirm the location of arsenic to be near the top of the GaAs: native oxide overlayer.
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Jain, M., Datta, G., Venkataraman, P. et al. Detection of excess crystalline As in GaAs: Nation oxide overlayers by Raman scattering. Pramana - J. Phys. 32, 641–646 (1989). https://doi.org/10.1007/BF02847388
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DOI: https://doi.org/10.1007/BF02847388