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Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam

  • 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION
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Abstract

The elemental and chemical compositions throughout the thickness of the GaAs native oxide layer slightly irradiated by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy at different photon energies enabling variation of probing depth. The presence of only two phases was observed: of the gallium oxide Ga2O3 and elementary arsenic Aso generated due to complete decay of arsenic oxides under the ion irradiation. Depth composition profiles were determined nondestructively. Despite inhomogeneous depth distribution, these profiles demonstrated domination (90 at %) of the dielectric Ga2O3 phase virtually throughout all the oxide thickness (~2 nm).

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REFERENCES

  1. G. P. Schwartz, G. J. Gualtieri, G. W. Kammlott, and B. Schwartz, J. Electrochem. Soc. 126, 1737 (1979).

    Article  Google Scholar 

  2. T. Ishikawa and H. Ikoma, Jpn. J. Appl. Phys. 31, 3981 (1992).

    Article  ADS  Google Scholar 

  3. G. Hollinger, R. Skheyta-Kabbani, and M. Gendry, Phys. Rev. B 49, 11159 (1994).

    Article  ADS  Google Scholar 

  4. C. C. Surdu-Bob, S. O. Saied, and J. L. Sullivan, Appl. Surf. Sci. 183, 126 (2001).

    Article  ADS  Google Scholar 

  5. L. Feng, L. Zhang, H. Liu, X. Gao, Zh. Miao, L. Wang, S. Niu, and C. Cheng, Proc. SPIE 8912, 89120N (2013).

    Article  Google Scholar 

  6. D. P. Norton, Mater. Sci. Eng. R 43, 139 (2004).

    Article  Google Scholar 

  7. V. M. Mikoushkin, V. V. Bryzgalov, S. Yu. Nikonov, A. P. Solonitsyna, and D. E. Marchenko, Semiconductors 52, 593 (2018).

    Article  ADS  Google Scholar 

  8. V. M. Mikoushkin, V. V. Brysgalov, E. A. Makarevskaya, A. P. Solonitsyna, and D. E. Marchenko, Surf. Coat. Technol. 344, 149 (2018).

    Article  Google Scholar 

  9. S. S. I. Fedoseenko, D. V. Vyalikh, I. E. Iossifov, R. Follath, S. A. Gorovikov, R. Püttner, J. S. Schmidt, S. L. Molodtsov, V. K. Adamchuk, W. Gudat, and G. Kaindl, Nucl. Instrum. Methods Phys. Res., Sect. A 505, 718 (2003).

    Google Scholar 

  10. V. M. Mikoushkin, V. V. Bryzgalov, Yu. S. Gordeev, S. Yu. Nikonov, A. P. Solonitsina, A. A. Zhuravleva, and M. M. Brzhezinskaya, Appl. Surf. Sci. 257, 4941 (2011).

    Article  ADS  Google Scholar 

  11. H. Gnaser, B. Heinz, W. Bock, and H. Oechsner, Phys. Rev. B 52, 14086 (1995).

    Article  ADS  Google Scholar 

  12. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).

    Google Scholar 

  13. S. Tanuma, V. J. Powell, and D. R. Penn, Surf. Interface Anal. 17, 927 (1991).

    Article  Google Scholar 

  14. D. Briggs and M. P. Seah, Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy (Wiley, Chichester, 1983).

    Google Scholar 

  15. J. J. Yeh and I. Lindau, At. Data Nucl. Data Tables 32, 1 (1985).

    Article  ADS  Google Scholar 

  16. V. M. Mikoushkin, V. V. Bryzgalov, S. Yu. Nikonov, A. P. Solonitsyna, and M. M. Brzhezinskaya, J. Surf. Invest. X-ray, Synchrotron Neutron Tech. 6, 971 (2012).

    Article  Google Scholar 

  17. A. I. van Sambeek and R. S. Averback, J. Appl. Phys. 83, 7576 (1998).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

This work was supported by the Russian Science Foundation (project no. 17-19-01200). The authors thank the German-Russian Laboratory at BESSY II Helmholtz Zentrum for the support in the synchrotron radiation experiments.

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Authors and Affiliations

  1. Ioffe Institute, 194021, Saint-Petersburg, Russia

    V. M. Mikoushkin, V. V. Bryzgalov, E. A. Makarevskaya & A. P. Solonitsyna

  2. Helmholtz-Zentrum BESSY II, German-Russian Laboratory, D-12489, Berlin, Germany

    D.E. Marchenko

Authors
  1. V. M. Mikoushkin
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  2. V. V. Bryzgalov
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  3. E. A. Makarevskaya
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  4. A. P. Solonitsyna
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  5. D.E. Marchenko
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Correspondence to V. M. Mikoushkin.

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Mikoushkin, V.M., Bryzgalov, V.V., Makarevskaya, E.A. et al. Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam. Semiconductors 52, 2057–2060 (2018). https://doi.org/10.1134/S1063782618160194

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  • DOI: https://doi.org/10.1134/S1063782618160194

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