Abstract
Hydrostatic pressure has negligible effect on the resistivity anomaly and thec H /a H ratio of Ti2O3. The results are consistent with the band-crossing mechanism wherein the aT and eT bands cross as thec H /a H ratio increases.
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Viswanathan, B., Devi, S.U. & Rao, C.N.R. Pressure effects on the semiconductor-semimetal transition in Ti2O3 . Pramana - J Phys 1, 48–52 (1973). https://doi.org/10.1007/BF02846148
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DOI: https://doi.org/10.1007/BF02846148