Abstract
Thin films of Sb-Te of varying compositions have been deposited on glass substrates following the three temperature method. The dc conductivity (σ), Hall coefficient (R H) and thermoelectric power (α) of annealed samples have been measured in the temperature range 300–470°K. Films exhibit metallic as well as semiconducting characteristics withp-type conductivity. The properties are found to be dependent on composition and thickness of the film.
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Paper presented at the Int. Conf. and Intensive Tutorial Course on Semiconductor Materials, New Delhi, India, December 8–16, 1988.
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Nikam, P.S., Pawar, R.R. Electrical properties of simultaneously evaporated Sb-Te thin films. Pramana - J Phys 36, 629–637 (1991). https://doi.org/10.1007/BF02845801
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DOI: https://doi.org/10.1007/BF02845801