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Pd-SiO2-GaAs MIS diode for Hydrogen detection

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Lettere al Nuovo Cimento (1971-1985)

Summary

A new metal-insulator-semiconductor structure (Pd-SiO2-GaAs) has been fabricated to make a hydrogen-sensitive device. At present, in a hydrogennitrogen mixture, a hydrogen concentration as low as 50 ppm has been detected. The long-term stability of the structure has been tested and found satisfactory.I/V curves of the diode measured in air and in hydrogen are shown and discussed. The authors want to thank M. Salvati and C. Flores for technical assistance.

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Authors and Affiliations

  1. Via Cineto Romano 42, Istituto di Elettronica dello stato Solido del C.N.R., 00156, Roma

    A. D’Amico, G. Fortunato & G. Petrocco

  2. OISE, Milano

    G. Guarini

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  1. A. D’Amico
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  2. G. Fortunato
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  3. G. Petrocco
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  4. G. Guarini
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D’Amico, A., Fortunato, G., Petrocco, G. et al. Pd-SiO2-GaAs MIS diode for Hydrogen detection. Lett. Nuovo Cimento 36, 483–486 (1983). https://doi.org/10.1007/BF02817958

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  • DOI: https://doi.org/10.1007/BF02817958

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