Abstract
Low temperature pyrolytic oxide films are deposited on silicon, aluminum, and molybdenum substrates and their pinhole density is investigated. Alumnium and molybdenum substates were prepared by depositing the metal films on oxidized silicon. Pinhole density in pyrolytic oxide is detected by electrophoretic decoration for silicon substrates, acid etching for aluminum substrates, and hot water dissolution for molybdenum substrates. Pinhole density decreased with increasing deposition temperature and film thickness, and with decreasing deposition rate. In general, the SiO2 deposited on chemical-mechanical polished silicon showed lower pinhole density than those deposited on metal substrates. Substrate surface defects and surface dust particles are major causes of pinholes in deposited SiO2.
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Doo, V.Y., Sun, V.M.L. Pinholes in pyrolytic oxide deposited on silicon and metals. Metall Trans 1, 741–745 (1970). https://doi.org/10.1007/BF02811603
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DOI: https://doi.org/10.1007/BF02811603