Abstract
In our previous studies, we have demonstrated that annealing of silicon dioxide in the absence of oxygen leads to the formation of silicon clusters near the surface. The mechanism of the formation of silicon clusters by this technique has not been sufficiently investigated. However, it has been found that the rate of the formation of nanoclusters and their sizes depend on the concentration of point defects in the silicon dioxide and on the concentration of impurities, for example, hydroxyl groups. As a continuation of these studies, in the present work we have investigated changes in the concentration of point defects in silicon dioxide films during high-temperature annealing. A new method has been proposed for the evaluation of changes in the concentration of point defects in silicon dioxide films before and after annealing. A model of the transformation of point defects in silicon dioxide into silicon nanoclusters due to the high-temperature annealing has been developed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. A. Bakaleinikov, M. V. Zamoryanskaya, E. V. Kolesnikova, V. I. Sokolov, and E. Yu. Flegontova, Phys. Solid State 46 (6), 1018 (2004).
M. V. Zamoryanskaya, E. V. Ivanova, and A. A. Sitnikova, Phys. Solid State 53 (7), 1474 (2011).
E. V. Kolesnikova and M. V. Zamoryanskaya, Physica B (Amsterdam) 404 (23–24), 4653, (2009).
E. V. Ivanova, A. A. Sitnikova, O. V. Aleksandrov, and M. V. Zamoryanskaya, Semiconductors 50 (6), 791 (2016).
J. Dutta, H. Hofmann, C. Hollestein, and H. Hofmeister, in Nanoparticles and Nanostructured Films: Preparation, Characterization, and Application, Ed. by J. H. Fendler (Wiley, New York, 1998), Chap. 8, p. 173.
R. A. Bley and S. M. Kauzlarich, in Nanoparticles and Nanostructured Films: Preparation, Characterization, and Application, Ed. by J. H. Fendler (Wiley, New York, 1998), Chap. 5, p. 101.
B. M. Monroy, G. Santana, J. Fandio, A. Ortiz, and J. C. Alonso, J. Nanosci. Nanotechnol. 6 (12), 3752 (2006).
P. R. J. Wilson, T. Roschuk, K. Dunn, E. N. Normand, E. Chelomentsev, O. H. Y. Zalloum, J. Wojcik, and P. Mascher, Nanoscale Res. Lett. 6 (1), 168 (2011).
M. V. Zamoryanskaya, Solid State Phenom. 156–158, 487 (2010).
E. V. Ivanova and M. V. Zamoryanskaya, Solid State Phenom. 205–206, 457 (2014)
M. V. Zamoryanskaya, S. G. Konnikov, and A. N. Zamoryanskii, Instrum. Exp. Tech. 47 (4), 477 (2004).
L. N. Skuja and A. R. Silin, Phys. Status Solidi A 70 (1), 43 (1982).
C. M. Gee and M. Kastner, J. Non-Cryst. Solids 40 (1–3), 577 (1980).
H.-J. Fitting, T. Barfels, A. N. Trukhin, B. Schmidt, A. Gulans, and A. Von Czarnovski, J. Non-Cryst. Solids 303 (2), 218 (2002).
P. A. Kulikov, Thermal Dissociation of Compounds (Metallurgiya, Moscow, 1969) [in Russian].
E. A. Tutov, M. N. Pavlenko, I. V. Protasova, and V. M. Kashkarov, Tech. Phys. Lett. 28 (9), 729 (2002).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © E.V. Ivanova, M.V. Zamoryanskaya, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 10, pp. 1895–1898.
Rights and permissions
About this article
Cite this article
Ivanova, E.V., Zamoryanskaya, M.V. Transformation of point defects in silicon dioxide during annealing. Phys. Solid State 58, 1962–1966 (2016). https://doi.org/10.1134/S1063783416100188
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783416100188