Abstract
A close-spaced growth process using HCl as the transport agent has been used to deposit epitaxial GaAs on germanium near 600°C. The dependences of the epitaxial surface morphology, bulk epitaxial layer electrical properties, and the autodoping behavior of arsenic in germanium and germanium in GaAs have been studied as a function of substrate temperature, orientation, and HCl concentration. A heavily germanium-doped layer is found in the GaAs at the substrate interface. GaAs layers greater than 12 μm in thickness exhibit mobilities of ≈3000 sq cm per v-sec and carrier concentrations of 1 to 5×1016 cm−3. A rate limitation is found for diffusion of arsenic into germanium from the GaAs layer. Optimized conditions for GaAs layer quality and minimal autodoping permit growth of mirror smooth layers on misoriented (111) germanium substrates.
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G. O. LADD, JR., formerly with Carnegie-Mellon University, Pittsburgh, Pa., is Research Staff Member, United Aircraft Research Laboratory, East Hartford, Conn. D. L. FEUCHT is Professor and Associate Head of Electrical Engineering, Carnegie-Mellon University.
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Ladd, G.O., Feucht, D.L. Autodoping effects at the interface of GaAs-Ge heterojunctions. Metall Trans 1, 609–616 (1970). https://doi.org/10.1007/BF02811584
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DOI: https://doi.org/10.1007/BF02811584