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A review of bulk and process-induced defects in GaAs semiconductors

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Abstract

Progress in the art of preparing and processing semiconductor device-grade material relies substantially on advances in the techniques of materials characterization and evaluation. Material which has been processed into a device is rarely, if ever, as perfect as in its original state, particularly with respect to freedom from crystal defects. The control of perfection in bulk crystals presents a complex problem because of the multiplicity of operations, such as epitaxial film growth and dopant diffusion, which introduce thermal strains, lattice mismatch, and impurity-related strains. This paper presents a review of defect-generating phenomena, including the effects of nonstiochiometry, dislocations, segregation, and precipitation in GaAs. X-ray topography, electron microscopy, and infrared transmission microscopy techniques for detecting the presence of bulk or process-induced imperfections are discussed. These techniques have proved useful in the analysis of a variety of problems, and have been helpful in modifying processes to control the occurrence of certain crystal imperfections.

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Authors and Affiliations

  1. Crystal Imperfections Section, General Telephone & Electronics Laboratories, Inc., Bayside, N.Y.

    E. D. Jungbluth (Head)

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  1. E. D. Jungbluth
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Jungbluth, E.D. A review of bulk and process-induced defects in GaAs semiconductors. Metall Trans 1, 575–586 (1970). https://doi.org/10.1007/BF02811580

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