Abstract
The anodization of Al film on InP substrate and properties of anodic Al2O33/InP have been investigated by AES, DLTS,I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has a permittivity of 11∼12 and a resistivity of 1.3×1013 ohm-cm. Interface state density at Al2O3/InP is about 1011 cm−2·eV−1. DLTS reveals that there is a continuously distributed interface electron traps at Al2O3/InP interface. Anodic Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator, etc.
Similar content being viewed by others
References
N. Susa, et al.,J. Electrochem. Soc.,130 (1983), 2220.
A. Yamamoto, et al.,J. Electrochem. Soc.,129 (1982), 2795.
H. H. Wiedet,J. Vac. Sci. Technol.,15 (1978), 4, 1498.
A. A. Studna, et al.,Appl. Phys. Lett.,39 (1981) 12, 965.
D. H. Laughlin, et al.,Appl. Phys. Lett.,37 (1980) 10, 915.
Y. Hirayama, et al.,J. of Electronic Materials,11 (1982) 6, 1011.
C. W. Wilmsen, et al.,Thin Solid Film,39 (1976) 3, 105.
C. W. Wilmsen, et al.,J. Vac. Sci. Technol.,15 (1978) 4, 1513.
P. N. Favernec, et al.,Appl. Phys. Lett.,34 (1978) 9, 807.
K. Kaminura, et al.,Thin Solid Films,56 (1979) 5, 215.
W. E. Spicer, et al.,J. VAc. Sci. Technol.,17 (1980) 5, 1019.
Y. Ohmachi, et al.,Japan J. Appl. Phys.,19 (1980) 7, 1425.
D. Fritzsche,Electron. Lett.,14 (1978) 3, 51.
K. Kanazawa, et al.,Japan J. Appl. Phys.,20 (1981) 3, L211.
Author information
Authors and Affiliations
About this article
Cite this article
Kangjin, G., Gendi, D. & Zheng, W. Study of the anodization of Al film on InP substrate and its properties. J. of Electron.(China) 9, 270–277 (1992). https://doi.org/10.1007/BF02778740
Issue Date:
DOI: https://doi.org/10.1007/BF02778740