Abstract
The anodization of Al film on InP substrate and properties of anodic Al2O33/InP have been investigated by AES, DLTS,I-V, C-V and ellipsometer. The results show that the anodic oxide Al2O3 has a permittivity of 11∼12 and a resistivity of 1.3×1013 ohm-cm. Interface state density at Al2O3/InP is about 1011 cm−2·eV−1. DLTS reveals that there is a continuously distributed interface electron traps at Al2O3/InP interface. Anodic Al2O3 exhibits good stability and electrical properties and could be used for passivation, diffusion mask and gate insulator, etc.
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Kangjin, G., Gendi, D. & Zheng, W. Study of the anodization of Al film on InP substrate and its properties. J. of Electron.(China) 9, 270–277 (1992). https://doi.org/10.1007/BF02778740
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DOI: https://doi.org/10.1007/BF02778740