Abstract
The significance of heterovalent, substitutional disorder for the distribution of charge carriers in La2−xSr x CuO4 has been investigated. Disorder is shown to cause strong variations of binding energies of the ions ranging to some eV for Sr contentsx=0.1. Balancing the energy for a hole transport, Cu3++O2−→Cu2++O−, and taking binding energy variations into account, the process is realized to become possible without consuming energy for a subset Θ for allx Cu3+ in one formula unit of La2−xSr x CuO4. The functions Θ(x) are presented for hole transports to apex and in-plane oxygens, respectively. The delocalization of charge carriers is interpreted to be caused by valency disorder on metal lattice sites.
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Birkholz, M., Rudert, R. Variations of ionic binding energies and the distribution of charge carriers in orthorhombic La2−xSr x CuO4. Z. Phys. B - Condensed Matter 99, 311–319 (1995). https://doi.org/10.1007/BF02769947
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DOI: https://doi.org/10.1007/BF02769947