Abstract
Real-time optical emission spectroscopy (OES) was used to monitor the deposition of TiN both from mixtures of tetrakis(dimethylamino)titanium (TDMATi)-N2 and TiCl4-H2-N2 in an electron cyclotron resonance chemical vapor deposition system. The accurate control of the ratio of the emission intensities of ionized nitrogen at 391.4 nm and molecular nitrogen at 357.7 nm (N +2 /N2) led to low temperature deposition of stoichiometric TiN (Ti/N ≈ 1) and very low resistivity in both cases. It was found that high ion density plasmas are crucial for a considerable reduction of the deposition temperature while maintaining good film quality. OES shows that the abundance of certain excited plasma species is not only dependent on the gas mixture and the deposition parameters, such as total pressure and microwave power, but also is strongly affected by the magnetic field configuration. The deposition rate and the film resistivity can be related to the emission intensity ratio, I(N +2 )/I(N2). Finally, the two processes are compared in terms of the quality of as-deposited and heat-treated films. The comparison shows that the films obtained with TDMATi exhibit lower resistivity and are thermally more stable than with TiCl4.
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Boumerzoug, M., Boudreau, M. & Mascher, P. Optical emission spectroscopy as a real time diagnostic tool for plasma-assisted deposition of TiN. Plasma Chem Plasma Process 17, 181–192 (1997). https://doi.org/10.1007/BF02766814
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DOI: https://doi.org/10.1007/BF02766814