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Preparation of In2Se3 layers on InAs by heterovalent substitution

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Abstract

In2Se3/InAs heterojunctions prepared by heterovalent substitution via annealing in Se vapor in a quasi-closed reactor were studied by scanning electron microscopy, electron-probe x-ray microanalysis, and electron diffraction in reflection and transmission.

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Authors and Affiliations

  1. Voronezh State Technological Academy, pr. Revolyutsii 19, 394017, Voronezh, Russia

    N. N. Bezryadin, A. V. Budanov, E. A. Tatokhin, B. L. Agapov & A. V. Linnik

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  1. N. N. Bezryadin
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  2. A. V. Budanov
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  3. E. A. Tatokhin
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  4. B. L. Agapov
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  5. A. V. Linnik
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Bezryadin, N.N., Budanov, A.V., Tatokhin, E.A. et al. Preparation of In2Se3 layers on InAs by heterovalent substitution. Inorg Mater 36, 864–867 (2000). https://doi.org/10.1007/BF02758692

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  • DOI: https://doi.org/10.1007/BF02758692

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