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Lattice mismatch and surface morphology studies of In x Ga1−x As epilayers grown on GaAs substrates

  • Surfaces Of Materials
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Abstract

In x Ga1−x As (0·06≤x≤0·35) epilayers were grown on GaAs substrates by atmospheric pressure metal organic chemical vapour deposition technique. Surface morphology and lattice mismatch in the InGaAs/GaAs films of different compositions were studied. Cross-hatched patterns were observed on the surface of the epilayers for bulk alloy composition up tox≈0·25. Forx>0·3, a rough textured surface morphology was observed.

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Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, 110 054, Delhi, India

    R Pal, M Singh, R Murlidharan, S K Agarwal, D Pal & D N Bose

  2. Semiconductor Division, Materials Science Centre, Indian Institute of Technology, 371 302, Kharagpur, India

    D Pal & D N Bose

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  1. R Pal
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  2. M Singh
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  3. R Murlidharan
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  4. S K Agarwal
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  5. D Pal
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  6. D N Bose
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Pal, R., Singh, M., Murlidharan, R. et al. Lattice mismatch and surface morphology studies of In x Ga1−x As epilayers grown on GaAs substrates. Bull Mater Sci 21, 313–316 (1998). https://doi.org/10.1007/BF02744959

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  • DOI: https://doi.org/10.1007/BF02744959

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