Skip to main content
SpringerLink
Log in

Electronic structure of amorphous semiconductors

  • Published:
Bulletin of Materials Science Aims and scope Submit manuscript

Abstract

The effect of light soaking and thermal quenching on the electronic structure of hydrogenated amorphous silicon (a-Si:H) and chalcogenide glasses was studied. It was found that lithium dopeda-Si:H shows both light and thermal induced changes in electronic transport properties. In contrast, chalcogenides do not show any effect of thermal quenching, although they exhibit changes upon light soaking. By analysing the conductivity and thermopower data we have concluded that the light soaking increases the potential fluctuations present in lithium dopeda-Si:H, whereas quenching does not change them. A model qualitatively explaining these effects is presented.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • Agarwal P 1995Thermal and light induced metastabilities in phosphorous and lithium doped hydrogenated amorphous silicon, Ph D Thesis, Indian Institute of Technology, Kanpur

    Google Scholar 

  • Agarwal P, Agarwal S C, Bhattacharya E, Kumar S and Kumar A 1993Indian J. Pure Appl. Phys. 31 367

    CAS  Google Scholar 

  • Agarwal S C 1990Bull. Mater. Sci. 14 257

    Google Scholar 

  • Agarwal S C 1995Bull. Mater. Sci. (to appear)

  • Agarwal S C and Fritzsche H 1974Phys. Rev. B10 4351

    Google Scholar 

  • Agarwal S C and Guha S 1985aPhys. Rev. B31 5547

    Google Scholar 

  • Agarwal S C and Guha S 1985bPhys. Rev. B32 8469

    Google Scholar 

  • Ast D G and Brodsky M H 1979Proc. 14th Intl. Conf. Phys. of Semicond. AIP Conf. Proc. No. 43 (ed.) B L H Wilson (Bristol and London: Institute of Physics) p. 1159

    Google Scholar 

  • Battezzati L, Demichelis F, Pirri C F, Tagliaferro A and Tresso E 1991J. Non-Cryst. Solids 137/138 87

    Article  Google Scholar 

  • Dersch H, Stuke J and Beichler J 1981Appl. Phys. Lett. 38 456

    Article  CAS  Google Scholar 

  • Fritzsche H 1971J. Non-Cryst. Solids 6 49

    Article  CAS  Google Scholar 

  • Guha S, den Boer W, Agarwal S C and Hack M 1985Appl. Phys. Lett. 47 947

    Article  CAS  Google Scholar 

  • Hauschildt D, Fuhs W and Mell H 1982Phys. Status Solidi (b)111 171

    Article  CAS  Google Scholar 

  • Hamed A J 1991Phys. Rev. B44 5585

    Google Scholar 

  • Hamed A and Fritzsche H 1989J. Non-Cryst. Solids 114 717

    Article  CAS  Google Scholar 

  • Hamed A, Fritzsche H, Deng X-M, Kohler S and Gupta R 1991J. Non-Cryst. Solids 137/138 287

    Article  Google Scholar 

  • Harshvardhan K and Hegde M S 1987Phys. Rev. Lett. 58 567

    Article  Google Scholar 

  • Hirabayashi I, Morigaki K and Nitta S 1980Jap. J. Appl. Phys. 19 L357

  • Howard J A and Street R A 1991Phys. Rev. B44 7935

    Google Scholar 

  • Jackson W B and Kakalios J 1988Amorphous silicon and related materials (ed.) H Fritzsche (Singapore: World Scientific) p. 165

    Google Scholar 

  • Kakalios J, Street R A and Jackson W B 1987Phys. Rev. Lett. 59 1037

    Article  CAS  Google Scholar 

  • Kakalios J and Fritzsche H 1984Phys. Rev. Lett. 53 1602

    Article  CAS  Google Scholar 

  • Matsuo S, Nasu H, Akamatsu C, Hayashi R, Imura T and Osaka Y 1988Jap. J. Appl. Phys. 27 L132

  • Misra D S 1984Determination of the density of localized states in well characterized thin films of hydrogenated amorphous silicon prepared by glow discharge, Ph D Thesis, Indian Institute of Technology, Kanpur

    Google Scholar 

  • Naito H and Okuda M 1993J. Non-Cryst. Solids 164–166 207

    Article  Google Scholar 

  • Overhof H and Beyer W 1981Philos. Mag. B43 433

    Google Scholar 

  • Pfeiffer G, Paesler M A and Agarwal S C 1991J. Non-Cryst. Solids 130 111

    Article  CAS  Google Scholar 

  • Reimer J A 1981J. Phys. 42 C4–715

    Google Scholar 

  • Shimakawa K, Inami S and Elliot S R 1991J. Non-Cryst. Solids 137/138 1017

    Article  Google Scholar 

  • Shimakawa K, Kondo A, Hayashi K, Akahori S, Kato T and Elliot S R 1993J. Non-Cryst. Solids 164–166 387

    Article  Google Scholar 

  • Shimizu T 1993J. Non-Cryst. Solids 164–166 163

    Article  Google Scholar 

  • Singh B, Rajagopalan S, Bhat P K, Pandya D K and Chopra K L 1979Solid State Commun. 29 167

    Article  CAS  Google Scholar 

  • Staebler D L and Wronski C R 1977Appl. Phys. Lett. 31 292

    Article  CAS  Google Scholar 

  • Street R A, Kakalios J and Hayes T M 1986Phys. Rev. B34 3030

    Google Scholar 

  • Street R A, Tsai C C, Kakalios J and Jackson W B 1987Philos. Mag. B56 305

    Google Scholar 

  • Stutzmann M 1985Appl. Phys. Lett. 47 21

    Article  CAS  Google Scholar 

  • Tsai C C, Stutzmann M and Jackson W B 1984AIP Proc. 20 242

    Article  Google Scholar 

  • Winer K and Street R A 1989J. Appl. Phys. 65 2272

    Article  CAS  Google Scholar 

  • Zhang Q, Takashima H, Zhou J-H, Kumeda M and Shimizu T 1994Phys. Rev. B50 1551

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology, 208 016, Kanpur, India

    S C Agarwal

Authors
  1. S C Agarwal
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Agarwal, S.C. Electronic structure of amorphous semiconductors. Bull. Mater. Sci. 18, 669–678 (1995). https://doi.org/10.1007/BF02744803

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02744803

Keywords

Search

Navigation