Abstract
The electrical properties of silver selenide thin films prepared by reactive evaporation have been studied. Samples show a polymorphic phase transition at a temperature of 403 ± 2 K. Hall effect study shows that it has a mobility of 2000 cm2V−1s−1 and carrier concentration of 1018 cm−3 at room temperature. The carriers are ofn-type. X-ray diffraction study indicates that the as-prepared films are polycrystalline in nature. The lattice parameters were found to bea= 4.353 Å,b= 6.929 Å andc = 7.805 Å.
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Kumar, M.C.S., Pradeep, B. Electrical properties of silver selenide thin films prepared by reactive evaporation. Bull Mater Sci 25, 407–411 (2002). https://doi.org/10.1007/BF02708019
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DOI: https://doi.org/10.1007/BF02708019