Abstract
The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ-silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (αc). Oxygen and carbon both accelerate thermal donor (TD) formation process but oxygen plays a dominating role. Three anneals of 10 h each followed by one anneal of 10 h support the view that carbon suppresses the donor formation. The absorption coefficient for carbon decreases after a few number of step-anneals resulting in the transformation of TD to new donor (ND) as brought about by annealing at temperature, > 500°C. It is quite logical to conclude that step-annealing may bring about the same results as obtained on continuous annealing for a longer duration.
The results have been fully supported by proper interpretation in the light of existing theories.
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References
ASTM Standard F123 1988Annual book of ASTM standards (Philadelphia: Am. Soc. Test. Mat.) p. 179
Babitskii Yu M, Vasil’eva M V, Grinshtein P M, Il’in M A and Remizov O A 1991Sov. Phys.-Semicond. 25 507
Bean A R and Newman R C 1972J. Phys. Chem. Solids 33 255
Capper P, Jones A W, Wallhouse E J and Wilkes J C 1977J. Appl. Phys. 48 1646
Cazacarra V and Zunino P 1980J. Appl. Phys. 51 4206
Fukuoka N, Yoneta M, Miyamura R and Saito H 1987Jap. J. Appl. Phys. 26 197
Gosele U and Tan T Y 1982Appl. Phys. A28 79
Iizuka T, Takasu S, Tajima M, Aria T, Najaki T, Inoue N andWatanake M 1985J. Electrochem. Soc. 132 1707
Kumar Tarun and Singh S 1994Bull. Electrochem. 10 518
Mathiot D 1987Appl. Phys. Lett. 51 904
McQuaid S A, Binns M J, Londos C A, Tucker J H, Brown A R and Newman R C 1995J. Appl. Phys. 77 1427
Newman R C 1985J. Phys. C: Solid State Phys. 18 967
Oehrlein G S, Lindstrom J L and Cohen S A 1984Proc. int.conf. defects in semiconductors (eds) L C Kimerling and J M Parsey Jr (Coronado: Metallurgical Society of AIME)p. 701
Ourmazd A, Schroter W and Bourret A 1984J. Appl. Phys. 561670
Prakash Om and Singh S 1995Indian J. Phys. A69 509
Prakash Om and Singh S 1997Solid State Phenomena 55 120
Prakash Om,Upreti N K and Singh S 1998Mater. Sci. and Engg. B52 180
Regolini J L,Stoquert J P, Ganter C and Siffert P 1986J. Electrochem. Soc. 133 2165
Reiche M, Reichel J and Nitzche W 1988Phys. Status Solidi A107 851
Sze S M and Irvin J C 1968Solid State Electron. 11 599
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Dubey, V., Singh, S. Formation of oxygen related donors in step-annealed CZ-silicon. Bull Mater Sci 25, 589–592 (2002). https://doi.org/10.1007/BF02707890
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DOI: https://doi.org/10.1007/BF02707890