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Recombination instability and domainisation inp-Ge(Au)

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Abstract

Results of an experimental study of short and longp-Ge(Au) samples are presented and compared qualitatively with data furnished by the one-dimensional theoretical model describing the evolution of domain instability in a two-parametric space ‘voltageV-emission coefficient β’. According to the theory, single-, double-, and multi-subdomain states and order-disorder-order transitions via intermittency have been observed in the system with increasing voltage. Three operation regimes of the system are found, depending on the region of the parametric space: ohmic, quenched (pulsing) and transit-time. In short samples, a second portion with S-switching is revealed in the current-voltage characteristic.

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Authors and Affiliations

  1. Laboratory of Nonlinear Dynamic and Chaos, Institute of Physics Daghestan Scientific Center of RAS, 367003, 94 M.Yaragskogo St., Makhachkala, Daghestan, Russia

    I. K. Kamilov, Kh. O. Ibragimov, K. M. Aliev & N. S. Abakarova

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  1. I. K. Kamilov
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  2. Kh. O. Ibragimov
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  3. K. M. Aliev
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  4. N. S. Abakarova
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Kamilov, I.K., Ibragimov, K.O., Aliev, K.M. et al. Recombination instability and domainisation inp-Ge(Au). Pramana - J Phys 62, 1111–1119 (2004). https://doi.org/10.1007/BF02705257

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  • DOI: https://doi.org/10.1007/BF02705257

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