Abstract
This paper briefly describes our work and the results on the growth of several III-V epitaxial semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such growth are listed and step-by-step procedures adopted to reduce them are discussed in particular reference to the growth of GaAs layers. The technique of growing very high purity layers by treating the melt with erbium is described for the growth of InGaAs and GaSb layers.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Bantien F, Banser E and Weber J 1987J. Appl. Phys. 61 2803
Dhar S, Mallik K and Nag B R 1991J. Appl. Phys. 69 3578
Dhar S, Mallik K and Mazumdar M 1995J. Appl. Phys. 77 1531
Dhar S, Paul S, Mazumdar M and Banerjee S 1997J. Appl. Phys. 81 2391
Dhar S, Paul S and Kulkarni V N 2000Appl. Phys. Lett. 76 1588
Gao W, Berger P R, Ervin M H, Pamulapati J, Lareau R T and Schauer S 1996J. Appl. Phys. 80 7094
Mallik K and Dhar S 1994Phys. Status Solidi (b) 184 393
Mallik K, Dhar S and Sinha S 1994Semicond. Sci. Technol. 9 1649
Wu M C, Chen E H, Chin T S and Kuang Y 1991Jpn. J. Appl. Phys. 30 2679
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Dhar, S. Growth of high purity semiconductor epitaxial layers by liquid phase epitaxy and their characterization. Bull Mater Sci 28, 349–353 (2005). https://doi.org/10.1007/BF02704248
Issue Date:
DOI: https://doi.org/10.1007/BF02704248