Abstract
Structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (QW) structures were investigated under various conditions of growth parameters such as growth temperature, flow rate of Ga and/ or In composition, and well and barrier widths. The optical properties affected by the growth parameters were well correlated with an In band gap, which is determined by the potential depth and the In composition in the well region. The emission peak energy was almost independent of the barrier width due to the relaxation of the piezoelectric fields in the triangular-shaped QWs. Photoluminescence spectra of the InGaN/GaN multiple QW structures showed a parabolic curve centered at 2.66 eV. The optical property of the triangular-shaped multiple QWs was substantially improved due to formation of quantum dot-like In composition fluctuations.
Similar content being viewed by others
References
Arakawa, Y., Someya, T., and Tachibana, K., “Proceedings of International Workshop on Nitride Semiconductors,”IPAP Conf. Series,1, 403 (2000).
Choi, R. J.,Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures, Ph. D. Dissertation, Chonbuk National University, 2003.
Choi, R. J., Hahn, Y. B., Shim, H.W., Suh, E.K., Hong, C.-H. and Lee, H. J., “Improvement of Electrical and Optical Properties of InGaN/ GaN-Based Light-Emitting Diodes with Triangular Quantum Well Structure,”Korean J. Chem. Eng.,20(6), 1134 (2003).
Choi, R. J., Lee, H. J., Hahn, Y. B. and Cho, H.-K., ” Structural and Optical Properties of InGaN/GaN Triangular-shape Quantum Wells with Different Threading Dislocation Dendities,”Korean J. Chem. Eng.,21(1), 292 (2004).
Choi, R. J., Shim, H.W., Han, M. S., Suh, E.K., Lee, H. J. and Hahn, Y. B., “Efficient Blue Light-Emitting Diodes with InGaN/GaN Triangular Shaped Multiple Quantum Wells,”Appl. Phys. Lett.,82, 2764 (2003).
Choi, R. J., Shim, H.W., Jeong, S. M., Yoon, H. S., Suh, E.K., Hong, C.H., Lee, H. J. and Kim, Y.W., “Triangular Quantum Well of InGaN for Active Layer of Light-Emitting Device,”Phys. Stat. Sol.,192(2), 430 (2002).
Ho, I. H. and Stringfellow, G. B., “Solid Phase Immiscibility in GaInN,”Appl. Phys. Lett.,69, 2701 (1996).
Jain, S. C., Willander, M., Narayan, J. and Van Overstraeten, R., “IIINitrides: Growth, Characterization, and Properties,”J. Appl. Phys.,87, 965 (2000).
Kaneta, A., Izumi, T., Okamoto, K., Kawakami, Y., Fujita, S., Narita, Y., Inoue, T. and Mukai, T., “Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illumination-Collection Mode,”Jpn. J. Appl. Phys.,40, 110 (2001).
Krost, A., Bohrer, J., Dadgar, A., Schnabel, R. F., Bimberg, D., Hansmann, S. and Burkhard, H., “High-resolution X-Ray Analysis of Compressively Strained 1.55 Μm GaInAs/AlGaInAs Multiquantum Well Structures near the Critical Thickness,”Appl. Phys. Lett.,67, 3325 (1995).
Mukai, T., Morita, D. and Nakamura, S., “High Power UV InGaN/ AlGaN Double Heterostructure LEDs,”J. Cryst. Growth,189/190, 778 (1998).
Nakamura, S., “The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes,”Science,281, 956 (1998).
Nakamura, S. and Chichibu, S. F., “Introduction to Nitride Semiconductor Blue Lasers and Light Emitting-Diodes,” Taylor and Fancis, New York (2000).
Nakamura, S., “Current Status and Future Prospects of InGaN-Based Laser Diodes,”Jpn. Soc. Appl. Phys. International,1, 5 (2000).
Narukawa, Y., Kawakami, Y., Funato, M., Fusita, Sz., Fujita, Sg. and Nakamura, S., “Role of Self-formed InGaN Quantum Dots for Exciton Localization in the Purple Laser Diode Emitting at 420 nm,”Appl. Phys. Lett.,70, 981 (1997).
Pearton, S. J., Zolper, J. C., Shul, R. J. and Ren, F., “GaN: Processing, Defects, and Devices,”J. Appl. Phys.,86, 1 (1999).
Romano, L. T., McCluskey, M. D., Van de Walle, C. G., Northrup, J. E., Bour, D. P., Kneissl, M., Suski, T. and Jun, J., “Phase Separation in InGaN Multiple Quantum Wells Annealed at High Nitrogen Pressures,”Appl. Phys. Lett.,75, 3950 (1999).
Strite, S. and Morkoc, H., “GaN, AlN, and InN: A Review,”J. Vac. Sci. Technol.,B10, 1237 (1992).
Tran, C. A., Karlicek Jr., R. F., Schurman, M., Osinsky, A., Merai, V., Li, Y., Eliashevich, I., Brown, M.G., Nering, J., Ferguson, I. and Stall, R., “Phase Separation in InGaN/GaN Multiple Quantum Wells and Its Relation to Brightness of Blue and Green LEDs,”J. Cryst. Growth,195, 397 (1998).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Choi, R.J., Suh, EK., Lee, H.J. et al. Effects of growth variables on structural and optical properties of InGaN/GaN triangular-shaped quantum wells. Korean J. Chem. Eng. 22, 298–302 (2005). https://doi.org/10.1007/BF02701501
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF02701501