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Dry etching of SrBi2Ta2O9: Comparison of inductively coupled plasma chemistries

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Abstract

A systematic study of the etch characteristics of SrBi2Ta2O9 (SBT) thin films in inductively coupled plasmas (ICPs) has been performed with various chemistries of Cl2/Ar, Cl2/O2/Ar, Cl2/NF3/Ar, and Cl2/NF3/O2/Ar. Etch rate was dependent on plasma chemistries and parameters. Addition of O2 stabilized the perovskite structure of SBT film and suppressed the etch rate, but NF3 enhanced the etch rate substantially mainly due to reactive fluorine radicals. Maximum etch rates obtained were: 740 å/min with Cl2/Ar, 320 å/min with Cl2/O2/Ar, 1,500 å/min with Cl2/NF3/Ar, and 1,600 å/min with Cl2/NF3/O2/Ar at 5 mTorr, 700 W. ICP power and 150 W. rf chuck power. Electrical properties of the SBT films were quite dependent on plasma chemistries employed; Cl2/NF3/O2/Ar showed the least damage in the films and resulted in the best P-E hysteresis loop having remnant polarization (2Pr)=12.3 ΜC/cms2 and coercive field (Ec)=41.9 V/cm.

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References

  • Bu, S. D., Park, B. H., Kang, B. S., Kang, S. H. and Noh, T. W., “Pulsed Laser Ablation Synthesis and Characterization of Ferroelectric SrBi2Ta2O9”,J. Korean Phys. Soc.,35, S1197 (1999).

    Google Scholar 

  • Desu, S. B. and Pan, W., “Reactive Ion Etching of Ferroelectric SrBi2 TaxNb2-xO9 Thin Films”,Appl. Phys. Lett.,68, 566 (1996).

    Article  CAS  Google Scholar 

  • Hahn, Y. B., Hays, D. C., Donovan, S. M., Abernathy, C. R., Han, J., Shul, R. J., Cho, H., Jung, K. B. and Pearton, S. I, “Effect of Additive Noble Gases in Chlorine-Based Inductively Coupled Plasma Etching of GaN, InN and AlN”,J. Vac. Sci. Technol. A,17(3), 763 (1999).

    Article  Google Scholar 

  • Hahn, Y. B. and Pearton, S. J., “Global Self-Consistent Model of an Inductively Coupled Plasma Etching System”,Korean J. Chem. Eng.,17, 304 (2000).

    CAS  Google Scholar 

  • Hahn, Y. B., Hays, D. C., Cho, H., Jung, K. B., Abernathy, C. R., Donovan, S. M., Pearton, S. J., Han, J. and Shul, R. J.,Mat. Sci. Eng. B,60, 95 (1999).

    Article  Google Scholar 

  • Hahn, Y. B., Hays, D. C., Cho, H., Jung, K. B., Abernathy, C. R. and Pearton, S. J., “Effect of Inert Gas Additive Species on Cl2 High Density Plasma Etching of Compound Semiconductors: Part I. GaAs and GaSb”,Appl. Surf. Sci.,147(1–4), 207 (1999).

    Article  CAS  Google Scholar 

  • Hahn, Y. B., Hays, D. C., Cho, H., Jung, K. B., Abernathy, C. R. and Pearton, S. J., “Effect of Inert Gas Additive Species on Cl2 High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs”,Appl. Surf. Sci.,147(1–4), 215 (1999).

    Article  CAS  Google Scholar 

  • Hays, D. C., Cho, H., Jung, K. B., Hahn, Y. B, Abemathy, C. R. and Pearton, S. J., “Selective Dry Etching Using Inductively Coupled Plasma — Part II. InN/GaN and InN/AlN”,Appl. Surf. Sci.,147(1–4), 134 (1999).

    Article  CAS  Google Scholar 

  • Im, Y. H., Park, J. S., Choi, C. S., Choi, R. J., Hahn, Y. B., Lee, S.-H. and Lee, J.-K., “Dry Etching of SrBi2Ta2O9 Thin Films in Cl2/NF3/ O2/Ar Inductively Coupled Plasmas”,J. Vac. Sci. Technol. A.,19(4), 1315 (2001).

    Article  CAS  Google Scholar 

  • Lee, J.-K., Jung, H.-J., Auciello, O. and Kingon, A. I., “Electrical Characterization of Pt/SrBi2Ta2O2/Pt Capacitors Fabricated by the Pulsed Laser Ablated Deposition Technique”,J. Vac. Sci. Technol. A,14, 900 (1996).

    Article  CAS  Google Scholar 

  • Lee, J. S, Kwon, H. J., Jeong, Y. W., Kim, H H., Hyun, S. J. and Noh, T. W., “Structural Characterization of the Low-Temperature Phase in Sr-Bi-Ta-O Films”,Appl. Phys. Lett.,74, 2690 (1999).

    Article  CAS  Google Scholar 

  • Lee, W.-J., Cho, C.-R., Kim, S.-H., You, I.-K, Kim, B. W., Yu, B.-G., Shin, C. H. and Lee, H. C., “Etching Behavior and Damage Recovery of SrBi2Ta2O9 Thin Films”,Jpn. J. Appl. Phys.,38, Part 2, L1428 (1999).

    Article  Google Scholar 

  • Lieberman, M. A. and Lichtenberg, J. A., “Principles of Plasma Discharges and Materials Processing”, John-Wiley and Sons, Inc., N.Y. (1994).

    Google Scholar 

  • Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Lee, J. and Jo, W., “Lanthanum-Substituted Bismuth Titanate for Use in Non-Volatile Memories”,Nature,401, 682 (1999).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. School of Chemical Engineering and Technology, Chonbuk National University, 561-756, Chonju, Korea

    Jin Su Park, Tae Hee Kim, Chang Sun Choi & Yoon-Bong Hahn

  2. Semiconductor Physics Research Center, Chonbuk National University, 561-756, Chonju, Korea

    Chang Sun Choi

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  1. Jin Su Park
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  2. Tae Hee Kim
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  3. Chang Sun Choi
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  4. Yoon-Bong Hahn
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Correspondence to Yoon-Bong Hahn.

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Park, J.S., Kim, T.H., Choi, C.S. et al. Dry etching of SrBi2Ta2O9: Comparison of inductively coupled plasma chemistries. Korean J. Chem. Eng. 19, 486–490 (2002). https://doi.org/10.1007/BF02697161

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  • DOI: https://doi.org/10.1007/BF02697161

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