Abstract
A reliable copper wafer bonding process condition, which provides strong bonding at low bonding temperature with a short bonding duration and does not affect the device structure, is desirable for future three-dimensional (3-D) integration applications. In this review paper, the effects of different process parameters on the quality of blanket copper wafer bonding are reviewed and summarized. An overall view of copper wafer bonding for different bonding parameters, including pressure, temperature, duration, clean techniques, and anneal option, can be established. To achieve excellent copper wafer bonding results, 400°C bonding for 30 min. followed by 30 min. nitrogen anneal or 350°C bonding for 30 min. followed by 60 min. anneal bonding is necessary. In addition, by meeting the process requirements of future integrated circuit (IC) processes, the best bonding condition for 3-D integration can be determined.
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Chen, K.N., Fan, A., Tan, C.S. et al. Bonding parameters of blanket copper wafer bonding. J. Electron. Mater. 35, 230–234 (2006). https://doi.org/10.1007/BF02692440
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DOI: https://doi.org/10.1007/BF02692440