Abstract
Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.
Similar content being viewed by others
References
J. D. Cressler, D. D. Tang, K. A. Jenkins, et al., ISSCC Tech Dig., 1989, 228–229.
J. D. Cressler, D. D. Tang, K. A. Jenkins, et al.,IEEE Trans on ED,ED-36(1989) 8, 1489–1502.
G. Y. Wang, M. Y. Lu, Usage & application of a general circuit simulation program SPICE-II. Southeast University press, Nanjing: 1988. (in Chinese)
J. Zheng, Y. Wang, S. Wang, et al.,Journal of Low Temperature Physics,14(1992)1, 42–48, (in Chinese).
H. Satake, T. Hamasaki,IEEE Trans on ED,ED-37(1990)7, 1688–1697.
J. C. S. Woo, J. D. Plummer, J. M. C. Stork,IEEE Trans on ED,ED-34(1987)1, 130–138.
T. Q. Zhang, K. H. Zhang, Z. Z. Zhu, Semiconductor integrated circuits, Shanghai science and technology press, Shanghai: 1986, 116–117, (in Chinese).
Author information
Authors and Affiliations
About this article
Cite this article
Yao, L., Jiang, Z., Keqiang, S. et al. Analysis of DC characteristics of ECL circuit at low temperature. J. of Electron.(China) 13, 275–283 (1996). https://doi.org/10.1007/BF02685838
Issue Date:
DOI: https://doi.org/10.1007/BF02685838