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RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect

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Abstract

In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3Al0.7As/InAs/InSb/In0.3Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature effect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage (Vth), transconductance (gm), and Ion/Ioff ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of −1.75 V, a high value of transconductance gm of 650 mS/mm, Ion/Ioff ratio of 1 × 106, a transition frequency (ft) of 790 GHz, and a maximum frequency (fmax) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce gm, and Ion/Ioff ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.

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Authors and Affiliations

  1. Department of Genie Electric and Electronics, Unit Research of Material and Renewable Energies, University Aboubek Belkaid, Tlemcen, Algeria

    M. Khaouani & A. Hamdoune

  2. LAAAS Laboratory, University of Batna 2, Batna, Algeria

    H. Bencherif

  3. Center Exploitation Telecommunication Satellite–Bouchaoui-Alger, Algeria Space Agency, Algiers, Algeria

    A. Belarbi

  4. Center Exploitation Telecommunication Satellite–Oran-Alger, Algeria Space Agency, Algiers, Algeria

    Z. Kourdi

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  1. M. Khaouani
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Correspondence to H. Bencherif.

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Khaouani, M., Bencherif, H., Hamdoune, A. et al. RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect. Trans. Electr. Electron. Mater. 22, 459–466 (2021). https://doi.org/10.1007/s42341-020-00250-8

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