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Monitoring of the process of formation of epitaxial films with the use of ultrasoft x-ray spectroscopy

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Abstract

The distinctive features of the atomic and electronic structure of thin surface layers of substances in the process of formation of epitaxial silicon films on silicon are studied using the procedures of reflection and scattering of ultrasoft x-ray radiation. The angular distribution of the scattered x-ray radiation (the scattering indicatrices) and the near fine structure of SiL2,3 spectra of reflection are investigated. The assumption of the sensitivity of the observed peak of anomalous scattering (the Yoneda peak) of x-ray radiation to the presence, in the surface regions of the materials, of extended double-boundary defects, the defects of packing, grain boundaries, dislocations, etc. is made. It is shown that the experimental procedure used makes it possible to obtain information on the surface layers of substances.

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Authors and Affiliations

  1. E. A. Buketov Karaganda State University, 30 Universitetskaya Str., 470074, Karaganda, Republic of Kazakhstan

    S. K. Kozhakhmetov & T. A. Kozhakhmetova

Authors
  1. S. K. Kozhakhmetov
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  2. T. A. Kozhakhmetova
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Corresponding author

Correspondence to S. K. Kozhakhmetov.

Additional information

Translated from Zhurnal Priklaldnoi Spektroskopii, Vol. 67, No. 4, pp. 496–498, July–August, 2000.

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Kozhakhmetov, S.K., Kozhakhmetova, T.A. Monitoring of the process of formation of epitaxial films with the use of ultrasoft x-ray spectroscopy. J Appl Spectrosc 67, 682–686 (2000). https://doi.org/10.1007/BF02681304

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  • DOI: https://doi.org/10.1007/BF02681304

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