Abstract
We have studied and summarized data on structure formation and dielectric characteristics of Si3N4-based materials obtained by hot pressing and activated sintering. We have measured the dielectric characteristics in the frequency range 1 kHz to 10 MHz. We have established that the level of the dielectric characteristics of the materials is significantly affected by the content of highly dispersed Si3N4 powder obtained by plasmochemical synthesis in the original mix.
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References
R. A. Andrievskii and I. I. Spivak,Silicon Nitride and Silicon Nitride-Based Materials [in Russian], Metallurgiya, Moscow (1984).
V. Ja. Petrovsky,Silicon Nitride Ceramics [in Polish], ITME, Warsaw (1993).
G. G. Gnesin, V. Ya. Petrovskii, A. A. Kas’yanenko, et al., “Electrotechnical hot pressed ceramic based on silicon nitride,”Diélektriki i Poluprovodniki, No. 36, 46–55 (1989).
S. Dutta, “Microstructure and property characterization of sintered Si3N4, SiC and SiAlON,”J. Amer. Ceram. Soc.,65, No. 1, 2–3 (1982).
V. Ya. Petrovskii, G. G. Gnesin, V. M. Kirilenko, et al., “Dielectric characteristics of silicon nitride powders in the microwave range,”Poroshk. Metall., No. 3, 62–71 (1980).
G. P. Srivastava, P. C. Mathur, and K. N. Tripathi, “Correlation studies of powder and bulk materials of microwave frequencies,”Jap. J. Appl. Phys.,13, No. 3, 433–436 (1974).
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Translated from Poroshkovaya Metallurgiya, Nos. 3–4(412), pp. 22–26, March–April, 2000.
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Petrovskii, V.Y., Shipilova, L.A. Dielectric characteristics of sintered silicon nitride materials. Powder Metall Met Ceram 39, 131–134 (2000). https://doi.org/10.1007/BF02678633
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DOI: https://doi.org/10.1007/BF02678633