Abstract
Mg, the only effective p-type dopant for nitrides, is well studied in thin films due to the important role of the impurity in light-emitting diodes and high-power electronics. However, there are few reports of Mg in thick free-standing GaN substrates. Here, we demonstrate successful incorporation of Mg into GaN grown by hydride vapor-phase epitaxy (HVPE) using metallic Mg as the doping source. The concentration of Mg obtained from four separate growth runs ranged between 1016 cm−3 and 1019 cm−3. Raman spectroscopy and x-ray diffraction revealed that Mg did not induce stress or perturb the crystalline quality of the HVPE GaN substrates. Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopies were performed to investigate the types of point defects in the crystals. The near-band-edge excitonic and shallow donor–shallow acceptor radiative recombination processes involving shallow Mg acceptors were prominent in the PL spectrum of a sample doped to 3 × 1018 cm−3, while the EPR signal was also thought to represent a shallow Mg acceptor. Detection of this signal reflects minimization of nonuniform strain obtained in the thick free-standing HVPE GaN compared with heteroepitaxial thin films.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
H. Morkoc, Handbook of Nitride Materials and Devices (New York: Wiley, 2008).
T. Paskova, D.A. Hanser, and K.R. Evans, Proc. IEEE 98, 1324 (2010).
N.A. Mahadik, S.B. Qadri, and J.A. Freitas Jr., Cryst. Growth Des. 15, 291 (2015).
M.J. Cich, R.I. Aldaz, A. Chakraborty, A. David, M.J. Grundmann, A. Tyagi, M. Zhang, F.M. Steranka, and M.R. Krames, Appl. Phys. Lett. 101, 223509 (2012).
I.C. Kizilyalli, A. Edwards, O. Aktas, T. Prunty, and D. Bour, IEEE Trans. Electron Devices 62, 414 (2015).
T. Paskova, E.A. Preble, A.D. Hanser, K.R. Evans, R. Kroger, P.P. Paskov, A.J. Cheng, M. Park, J.A. Grenko, and M.A.L. Johnson, Phys. Status Solidi C 6, S344 (2009).
T. Sochacki, M. Amilusik, B. Lucznik, M. Fijalkowski, J.L. Weyher, B. Sadovyi, G. Kamler, G. Nowak, E. Litwin-Staszewska, A. Khachapuridze, I. Grzegory, R. Kucharski, M. Zajac, R. Doradzinski, and M. Bockowski, Jpn. J. Appl. Phys. 53, 05FA04 (2014).
P. Kruszewski, P. Prystawko, I. Kasalynas, A. Nowakowska-Siwinska, M. Krysko, J. Plesiewicz, J. Smalc-Koziorowska, R. Dwilinski, M. Zajac, R. Kucharski, and M. Leszczynski, Semicond. Sci. Technol. 29, 075004-1 (2014).
M. Bockowski, B. Lucznik, T. Sochacki, M. Amilusik, E. Litwin-Staszewska, R. Piotrzkowski, and I. Grzegory, Proc. SPIE 8625, 862509-1 (2013).
A. Usikov, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Syrkin, V. Dmitriev, A.Y. Nikiforov, S.G. Sundaresan, S.J. Jeliaszkov, and A.V. Davydov, Phys. Status Solidi C 5, 1829 (2008).
E.R. Glaser, M. Murthy, J.A. Freitas Jr., D.F. Storm, L. Zhou, and D.J. Smith, Physica B 401–402, 327 (2007).
J.L. Patel, J.E. Nicholls, and J.J. Davies, J. Phys. C 14, 1339 (1981).
J.A. Freitas Jr., M.A. Mastro, E.R. Glaser, N.Y. Garces, S.K. Lee, J.H. Chung, D.K. Oh, and K.B. Shim, J. Cryst. Growth 350, 27 (2012).
J.A. Weil, J.R. Bolton, and J.E. Wertz, Electron Paramagnetic Resonance (New York: Wiley, 1994).
U. Haboeck, H. Siegle, A. Hoffmann, and C. Thomsen, Phys. Status Solidi C 0, 1710 (2003).
R. Kirste, M.P. Hoffmann, J. Tweedie, Z. Bryan, G. Callsen, T. Kure, C. Nenstiel, M. Wagner, R. Collazo, A. Hoffmann, and Z. Sitar, J. Appl. Phys. 113, 103504 (2013).
C. Kisielowski, J. Kruger, S. Ruvimov, T. Suski, J.W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, and R.F. Davis, Phys. Rev. B 54, 17745 (1996).
C. Flynn and W. Lee, Mater. Res. Express 1, 025901 (2014).
G. Popovici, G.Y. Xu, A. Botchkarev, W. Kim, H. Tang, A. Salvador, H. Morkoc, R. Strange, and J.O. White, J. Appl. Phys. 82, 4020 (1997).
C.G. Van de Walle, Phys. Rev. B 68, 165209 (2003).
J.A. Freitas Jr., G.C.B. Braga, W.J. Moore, J.G. Tischler, J.C. Culbertson, M. Fatemi, S.S. Park, S.K. Lee, and Y. Park, J. Cryst. Growth 231, 322 (2001).
M.E. Zvanut and W.R. Willoughby, (Raman data), Unpublished data, (Department of Physics, University of Alabama at Birmingham, Alabama, USA, 2015)
B. Monemar, P.P. Paskov, G. Pozina, C. Hemmingsson, J.P. Bergman, T. Kawashima, H. Amano, I. Akasaki, T. Paskova, S. Figge, D. Hommel, and A. Usui, Phys. Rev. Lett. 102, 235501 (2009).
J.A. Freitas Jr., B.N. Feigelson, and T.J. Anderson, Appl. Phys. Express 6, 111001 (2013).
E.R. Glaser, J.A. Freitas Jr., B.V. Shanabrook, and D.D. Koleske, Phys. Rev. B 68, 195201 (2003).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zvanut, M.E., Dashdorj, J., Freitas, J.A. et al. Incorporation of Mg in Free-Standing HVPE GaN Substrates. J. Electron. Mater. 45, 2692–2696 (2016). https://doi.org/10.1007/s11664-016-4413-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-016-4413-9