Abstract
Epitaxial growth of high purity undoped GaAs by the hydride VPE process with electrical properties comparable to the best AsC3 VPE results have been achieved. Background carrier concentration n77 = 2 × 1013/cc and mobility μ77 = 201,000 cm2/Vsec was achieved by careful control of the growth process. The effects of HC1 partial pressure over the Ga source, arsine and secondary HC1 partial pressures were Investigated. Use of secondary HC1 was found to result in compensated layers and hence should be avoided for high purity layers. Aging of the liquid HC1 source in its stainless steel container over extended time period was also found to result in degradation of epilayer purity due to increased acceptor contamination. Low temperature photoluninescence and far infra-red photoconductivity measurements were used to determine the residual acceptors and donors respectively. The major acceptors found were carbon and zinc. The major donor was sulfur. Key works: GaAs, hydride VPE growth, high purity layers, impurity identification
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References
J.R. Knight, D. Effer and P.R. Evans, Solid State Electron8, 178. (1965).
C.M. Wolfe, G.E. Stillman and E.B. Owens, J. Electrochem. Soc.117, 129. (1971)
J.v. Dilorenzo, J. Crystal Growth17, 189. (1972)
T. Aoki, Jpn. J. Appl. Phys. 14, 1267. (1975)
Lin Lan-Ying, Lin Yao-Wang, Zhong Xing-Ru, Zhang Yan-Yin, and Li Hsiu-Lan, J. Cryst. Growth_56, 344. (1982)
H.B. Poggs and B.M. Kemlage, J. Cryst. Growth31 183. (1975)
R.E. Enstrom and C.C. Peterson, Trans. AIME239, 413. (1967).
R.E. Enstrom and J.R. Appert, in: Gallium Arsenide, Proc. Second intern. Symp. mst. Phys. Soc, Conf. Ser No. 7, Dallas, 213. (1968)
J.J. Tietjen, V.S. Ban, R.E. Enstrom and D. Richman J. Vacuum Sci. Tech8, 55. (1971)
J.K. Kennedy, W.D. Potter and D.E. Davies, J. Cryst. Growth24, 25, 233. (1974)
T.S. Low, G.E. Stillman, D.M. Collins, CM. Wolfe, S. Tiwari and L.F. Estman, Appl. Phys. Lett.40_ 11034. (1982).
J.K. Abrokwah, T.N. Peck, R.A. Walterson, G.E. Stillman, T.S. Low and B. Skromme. Presented at Electronic Materials Conference, Paper A-3, June 23–25, Colorado State University, Fort Collins, Colorado, 1982.
J.K. Abrokwah, T.N. Peck, M. Longerbone, and J. Geddes, to be submitted to Appl. Phys. Lett.
J.K. Abrokwah, M.L. Hitchell, J.E. Borell and D.R. Schulze, J. Electron. Mater.10_, 723. (1981).
R. Dingle, C. Weisbuck, H.L. Stornier, H. Morkoc and A-Y Cho, Appl. Phys. Lett. ul40 507. (1982)
G.E. Stillman and CM. Wolfe, in Semiconductors and semimetals, edited by R.K. Willardson and A.C. Beer, Academic, New York, 1977, Vol. 12, pp 169–290.
P.D. Dapkus, H.M. Manasevit, K.L. Hess, T.S. Low and G.E. Stillman, J. Cryst. Growth 55 10 (1981)
T.S. Low, G.E. Stillman and CM. Wolfe, GaAs and Related Compounds, Oiso. Donf. Ser. No. 63, Ch 4 (Inst. of Physics, London 1982) pp 143–148.
T.S. Low and G.E. Stillman, T. Kanamsi, T. Udagawa. Appl. Phys. Lett. 41 (2), 183. (1982)
M. Ozeki, K. Kitahara, K. Nakai, A. Shifatomi, K. Dazai, S. Okawa and 0. Rynzan, Jpn. J. Appl. Phys. 16, 1617. (1977)
B.J. Skromme, T.S. Low, T.J. Roth, G.E. Stillman, J.K. Kennedy and J.K. Abrokwah, Presented at Electron Materials Conference, Paper M-3, June 23–25, Colorado State University, Fort Collins, Colorado, 1982.
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Abrokwah, J.K., Peck, T.N., Walterson, R.A. et al. High purity GaAs grown by the hydride vpe process. J. Electron. Mater. 12, 681–699 (1983). https://doi.org/10.1007/BF02676796
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DOI: https://doi.org/10.1007/BF02676796