Abstract
We studied phonon-polariton modes in long-period GaAs/GaPAs semiconductor superlattices using the methods of frustrated total internal reflection and IR spectroscopy in the region of residual rays. The excitation of waveguide, real, and virtual surface and volume phonon polariton modes was observed experimentally. Their dispersion relations were calculated and compared with experimental data, and the excitation nature was identified with the aid of the spectra of permittivity and a normal component of the wave vector in heterostructure layers.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 4, pp. 460–466, July–August, 1999.
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Venger, E.F., Goncharenko, A.V., Gorya, O.S. et al. Study of phonon polaritons in GaAs/GaPAs superlattices using methods of IR reflection spectroscopy. J Appl Spectrosc 66, 493–500 (1999). https://doi.org/10.1007/BF02675375
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DOI: https://doi.org/10.1007/BF02675375