Abstract
The liquidus and solidus curves for the pseudobinary HgSe-CdSe system have been determined by differential thermal-arrest measurements, which also show the presence of a peritectic reaction with an invariant temperature of 947.5 ± 4.0°C and a peritectic composition corresponding to a CdSe mole fraction of 0.57. The measured heat of transformation is small and has negligible effect on the shape of the solidus line. The data have been corrected for vapor-pressure effects and analyzed by a thermodynamic non-ideal solution theory that assumes completely miscible solid solutions. The experimental liquidus and solidus data points can be fit with free-energy-of-mixing values of BL = 27570 − 3.09RT and BS = 30930 − 2.93RT for the liquid and solid phases, respectively, where R is the ideal gas constant and T is the absolute temperature. The phase diagram data have been applied to analyze the growth of HgSe-CdSe pseudobinary alloy crystals by the Bridgman and quench-anneal methods, and the crystalline properties of ingots grown by both methods are discussed.
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References
A. Kalb and V. Leute, Phys. Stat. Solidi5, K199 (1971).
S.L. Lehoczky, J.G. Broerman, D.A. Nelson, and C.R. Whitsett, Phys. Rev. B9, 1598 (1974).
B. Segall and D.T.F. Marple, inPhysics and Chemistry of II-VI Compounds, ed. by M. Aven and J.S. Premer, (North Holland Publishing Co., Amsterdam, Holland, 1967), p. 319.
L.M. Foster and J.F. Woods, J. Electrochem. Soc.118, 1175 (1971).
M.B. Panish and M. Ilegems, inProgress in Solid State Chemistry, ed. by H. Reiss and J.O. McCaldin, (Pergamon Press, Elmsford, N.Y., 1972), p. 39.
A.S. Jordan, Met. Trans.1, 239 (1970).
W.G. Pfann, Trans. AIME194, 747 (1952).
V.G. Smith, W.A. Tiller, and J.W. Rutter, Can. J. Phys.33, 723 (1955).
W.A. Tiller, K.A. Jackson, J.W. Rutter, and B. Chambers, Acta Met.1, 428 (1953).
Handbook of Chemistry and Physics, ed. by R.C. Weast (Chemical Rubber Co., Cleveland, 1974), pp. D185-D186.
H.A. Bowman and R.M. Schooner, J. Res. Natl. Bur. Std. (U.S.)71C, 179 (1967).
R.F. Brebrick, J. Phys. Chem. Solids43, 3846 (1965).
J. Steininger, J. Appl. Phys.41, 2713 (1970).
W.J. Woesten, J. Phys. Chem.65, 1949 (1961).
A.J. Strauss and J. Steininger, J. Electrochem. Soc.117, 1420 (1970).
A. Jayoraman, W. Klement, Jr., and G.C. Kennedy, Phys. Rev.130, 2277 (1963).
A. Reisman, M. Bekenblit, and M. Witzen, J. Phys. Chem.66, 2210 (1962).
B.M. Kulwicki, Ph. D. Dissertation, University of Michigan (1963).
D.R. Mason and D.F. O’Kane, inProc. Int. Conf. Semiconductor Physics,Prague, 1960, ed. by Czechoslovakian Academy of Sciences, (Academic Press, New York, 1961), p. 1026.
W.R. Cook, J. Am. Ceram. Soc.51, 518 (1968).
L.A. Sysoev, E.K. Raiskin and V.R. Gur’ev, Inorg. Matter3, 341 (1967).
A.J. Strauss and L.B. Farrell, J. Inorganic Nucl. Chem.24, 1211 (1962).
L.N. Swink and M.J. Brau, Met. Trans.1, 629 (1970).
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This research was supported by the Air Force Materials Laboratory and the Air Force Avionics Laboratory, Air Force Systems Command, United States Air Force, Wright-Patterson AFB, Ohio, and the McDonnell Douglas Independent Research and Development Program.
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Nelson, D.A., Summers, C.J. & Whitsett, C.R. Phase diagram and crystal growth of pseudobinary HgSe-CdSe alloys. J. Electron. Mater. 6, 507–529 (1977). https://doi.org/10.1007/BF02672231
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DOI: https://doi.org/10.1007/BF02672231