Abstract
The effects of different growth interrupt schemes at the compositional interfaces in 30 period InGaAs(P)/InP superlattices grown by metal-organic vapor phase epitaxy have been studied for quarternary compositions λ = 1.35 and 1.52 µm as well as for the ternary case λ = 1.67 µm. The best full width at half maximum of the photoluminescence peaks at 4 K are 7–8 meV for the InGaAsP/InP and 4.6 meV for the InGaAs/InP superlattices indicating extremely high optical quality and vertical homogenity of the samples. However, strong memory effects relating to both the presence and the absence of arsenic are evident from x-ray diffraction measurements. Reactor purging as a remedy is limited by the surface roughening and defect formation induced by a non-equilibrium vapor phase composition. Optimal growth interrupts must therefore be determined considering both the interface smoothness and abruptness and will in general be composition dependent.
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Landgren, G., Wallin, J. & Pellegrino, S. Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPE. J. Electron. Mater. 21, 105–108 (1992). https://doi.org/10.1007/BF02670928
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DOI: https://doi.org/10.1007/BF02670928