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Growth of Ag nanostructures on high-index Si (5 5 12) surfaces under UHV conditions: effect of prior surface treatment before deposition

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Abstract

High-index substrates, such as Si (5 5 12), provide self-assembled one-dimensional periodic array of structures upon reconstruction and can be used as templates for growth of aligned nanoscale structures. Crystalline quality of Ag nanostructures grown under UHV conditions using a molecular beam epitaxy system on reconstructed Si (5 5 12) surface is compared with those structures grown on HF-treated and native-oxide-covered Si (5 5 12) surfaces. These have been characterized by using reflection high-energy electron diffraction (RHEED), transmission electron microscopy (TEM) and in situ scanning tunneling microscopy methods. The RHEED and TEM studies confirm the polycrystalline, textured and crystalline nature of the Ag nanostructures grown on Si (5 5 12) with native oxide, HF-treated, and reconstructed surfaces, respectively. The crystalline quality of Ag nanostructures on HF-treated substrate was found to improve at higher substrate temperatures during growth.

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Acknowledgments

Parlapalli Venkata Satyam (PVS) acknowledges the financial support from the Department of Atomic Energy, Government of India, for 11th Plan Project No. 11-R&D-IOP-5.09-0100 and 12th Plan Project No. 12-R&D-IOP-5.09-0100. PVS acknowledges the technical help in of Dr. Avijit Kumar, Department of Applied Physics, Aalto University School of Science, Aalto, Finland, for setting up the UHV-STM.

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  1. Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha, 751005, India

    Anjan Bhukta, Puspendu Guha, Arnab Ghosh, Paramita Maiti & Parlapalli Venkata Satyam

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  1. Anjan Bhukta
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  2. Puspendu Guha
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  3. Arnab Ghosh
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  4. Paramita Maiti
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Correspondence to Parlapalli Venkata Satyam.

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Bhukta, A., Guha, P., Ghosh, A. et al. Growth of Ag nanostructures on high-index Si (5 5 12) surfaces under UHV conditions: effect of prior surface treatment before deposition. Appl. Phys. A 122, 356 (2016). https://doi.org/10.1007/s00339-016-9929-6

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