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III-V alloys for optoelectronic applications

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Abstract

The energy bandgap values of the 9 binary compounds, 18 ternary alloys and 15 quaternary alloys comprising the family of practical III-V materials can, in principle, provide sources, detectors, and optoelectronic components over a wavelength range between 0.51 and 7.3 μm. The material and metallurgical properties essential to the selection of III-V compounds and alloys for epitaxial opto-electronic devices are reviewed. Emphasis is given to the effects of lattice mismatch between ad joining heteroepitaxial layers, with techniques illustrated for minimizing mismatch effects in practical ternary and quaternary device structures. The most promising applications for III-V heteroepitaxial structures in the emerging fields of fiber optics, integrated optics, and photodetectors are cited.

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  1. RCA Laboratories, 08540, Princeton, New Jersey

    C. J. Nuese

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This paper is based on an invited presentation at the

This paper is based on an invited presentation at the

This paper is based on an invited presentation at the

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Nuese, C.J. III-V alloys for optoelectronic applications. J. Electron. Mater. 6, 253–293 (1977). https://doi.org/10.1007/BF02660488

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