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Study of optical and electrical properties of AlxGa1−xSb grown by metalorganic chemical vapor deposition

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Abstract

AlxGa1−xSb films in the regime 0×0.25 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa, and TMSb precursors. We report growth conditions and film properties, including the effect of V/III ratio and growth temperature on electrical and optical properties. Growth temperatures in the range of 520°C and 680°C and V/III ratios from 1 to 5 have been investigated. All epilayers grown exhibit p-type behavior. The mobility decreases and the carrier concentration increases sharply when a small amount of Al is incorporated into GaSb. The sharp cutoff and Fabry-Perot oscillations of the transmission spectra of the AlGaSb layers confirm the high quality of the films. The principle photoluminescence features observed are attributed to bound exciton and donor-acceptor transitions with FWHM comparable to the best values reported elsewhere.

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Author notes

  1. A. H. Ramelan

    Present address: Physics Department, Faculty of Mathematics and Natural Science, Universitas Sebelas Maret, Jl. Ir. Sutami No. 36A, Surakarta, Indonesia

Authors and Affiliations

  1. Division of Information and Communication Sciences, Macquarie University, 2109, NSW, Australia

    A. H. Ramelan, K. Drozdowicz-Tomsia, E. M. Goldys & T. L. Tansley

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  1. A. H. Ramelan
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  2. K. Drozdowicz-Tomsia
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  3. E. M. Goldys
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  4. T. L. Tansley
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Ramelan, A.H., Drozdowicz-Tomsia, K., Goldys, E.M. et al. Study of optical and electrical properties of AlxGa1−xSb grown by metalorganic chemical vapor deposition. J. Electron. Mater. 30, 965–971 (2001). https://doi.org/10.1007/BF02657718

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  • DOI: https://doi.org/10.1007/BF02657718

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