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Structural and optical properties of GaAs and InAs for doping Sb under the effect of pressure and temperature: DFT and EPM investigations

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Abstract

We have developed first-principles calculations utilizing the empirical pseudopotential method and density functional theory to examine the basic behaviors of the GaAs and InAs semiconductor compounds for doped Sb. The electronic and optical responses of these compounds were calculated. We examined the impacts of the temperature and pressure with the energy band forbidden and parameters of optical parameters (static dielectric constant) of the considered compounds. The literature hasn’t fully analyzed the electronic and optical characteristics of the compounds with doping Sb under the impact of pressure and temperature for fixed composition (x = 0.5). So, we concentrated on the study of these properties.

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Acknowledgements

We acknowledge The Science, Technology & Innovation Funding Authority (STDF) in cooperation with The Egyptian Knowledge Bank for providing the funding.

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Open access funding is provided by The Science, Technology & Innovation Funding Authority (STDF) in cooperation with The Egyptian Knowledge Bank (EKB).

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Authors and Affiliations

  1. Faculty of Education, Soran University, Soran, Erbil, Kurdistan Region, 44008, Iraq

    Mazin S. H. Othman

  2. Department of Physics, Faculty of Science, Mansoura University, P. O. Box: 35516, Mansoura, Egypt

    Elkenany B. Elkenany

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  1. Mazin S. H. Othman
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Mazin SH. Othman and Elkenany B. Elkenany designed research, performed research, and wrote the paper. All authors have read and approved the final manuscript.

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Othman, M.S.H., Elkenany, E.B. Structural and optical properties of GaAs and InAs for doping Sb under the effect of pressure and temperature: DFT and EPM investigations. Opt Quant Electron 54, 807 (2022). https://doi.org/10.1007/s11082-022-04203-8

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