Abstract
Indium alloyed to n-type CdTe of about 1016 cm-3 electron concentration provides a contact resistivity of about 7 x 10-3 ohm cm2. This is achieved by alloying for 10 minutes at 150-450‡C in a sealed ampoule with an overpressure of cadmium. If the alloying is done in an open tube H2 flow without a Cd vapor overpressure, alloying temperatures above 250‡C cause the contact resistance to rise as cadmium vacancies increase the compensation in the CdTe. Further improvement of the contact resistivity to 1 x 10-3 ohm cm is obtained by a 900‡C diffusion of In into the n-CdTe (electron concentration 1016 cm-3 before the diffusion).
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Nozaki, S., Milnes, A.G. Specific contact resistivity of indium contacts to n-type CdTe. J. Electron. Mater. 14, 137–155 (1985). https://doi.org/10.1007/BF02656672
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DOI: https://doi.org/10.1007/BF02656672