Abstract
The depletion layer capacitance of n-type gallium arsenide was measured as a function of its anodic potential in an electrochemical cell. It was shown that these measurements can lead to accurate values of carrier concentration, and are compatible with stripping by electrochemical dissolution, provided that surface area is preserved. The experimental conditions required to maintain the electrolyte-semiconductor contact area constant, are described. Also, it is shown that excursions into regions outside those specified lead to significant enhancement of capacity (via real area increase). Under these conditions the carrier concentration can no longer be obtained but much can be learnt about the internal structure of the material.
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Ambridge, T., Faktor, M.M. Electrochemical capacitance characterization of n-type gallium arsenide. J Appl Electrochem 4, 135–142 (1974). https://doi.org/10.1007/BF00609022
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DOI: https://doi.org/10.1007/BF00609022