Abstract
The " hybrid" organometallic VPE process for the growth of AlxGal-xAs has been explored. Six growth parameters have been considered; substrate orientation, substrate temperature during growth, total flow rate and ratios of Al, HC1 and As to the total group III flow rate. The effects of these six growth parameters on the growth process (growth rate, composition and surface morphology) and the materials properties (carrier concentration, photoluminescence intensity and spectrum) have been systematically studied. A technique has been developed for the growth of heterostructures by changing only the H2 diluent flow rate. This results in high quality heterostructures with x changing from 0.05 to 0.30 in > 100 å.
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Work partially supported by Air Force Systems Command under Contract No. F 1968-77-C-0199. 225.
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Stringfellow, G.B., Hall, H.T. Organometallic VPE growth of AlxGa1−xAs. J. Electron. Mater. 8, 201–226 (1979). https://doi.org/10.1007/BF02655624
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DOI: https://doi.org/10.1007/BF02655624