Abstract
Phase equilibria in the In–Al–Ga–P–As system have been analyzed in terms of a simple solution model. We have calculated the stability limits of InAlGaPAs solid solutions on GaAs substrates in the temperature range 937–1223 K. The addition of indium to AlGaPAs solid solutions leads to a slight decrease in growth rate under diffusion control and a considerable increase under kinetic control. Moreover, the addition of indium to AlGaPAs solid solutions has been shown to reduce the full width at half maximum of their X-ray rocking curves and photoluminescence spectra and increase the photoluminescence intensity. Increasing the indium concentration in In x Al y Ga1–x–yP z As1–z solid solutions to x > 0.3 extends their stability region, increases their band gap, and reduces the composition region of lattice-matched In x Al y Ga1–x–yP z As1–z/GaAs heterostructures, but these become thermal expansion-matched. With increasing indium concentration in the solid solutions, the distribution coefficients of P and As decrease, whereas those of Al and In increase.
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Alferov, Zh.I., Past and future of semiconductor heterostructures, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1998, vol. 32, no. 1, pp. 3–17.
Dolginov, L.M., Eliseev, P.G., and Ismailov, I., Lightemitting injection devices based on multicomponent semiconductor solid solutions, Itogi Nauki Tekh., Ser.: Radiotekh., 1980, vol. 21, pp. 3–115.
Khvostikov, V.P., Lunin, L.S., Kuznetsov, V.V., Oliva, E.V., Khvostikova, O.A., and Shvarts, M.Z., InAs based multicomponent solid solutions for thermophotovoltaic converters, Tech. Phys. Lett., 2003, vol. 29, no. 10, pp. 851–855.
Rogalski, A., New material systems for third generation infrared photodetectors, Opt.-Electron. Rev., 2008, vol. 16, no. 4, pp. 458–482.
Wang, C.A., Choi, H.K., and Ransom, S.L., High quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices, Appl. Phys. Lett., 1999, vol. 75, no. 9, pp. 1305–1309.
Karandashev, S.A., Matveev, B.A., Remennyi, M.A., Shlenskii, A.A., Lunin, L.S., Ratushnyi, V.I., Koryuk, A.V., and Tarakanova, N.G., Properties of GaInAsSb/GaSb (λ = 1.8–2.3 μm) immersion lens photodiodes at 20–140°C, Semiconductors, 2007, vol. 41, no. 11, pp. 1369–1374.
Kuznetsov, V.V., Lunin, L.S., and Ratushnyi, V.I., Geterostruktury na osnove chetvernykh i pyaternykh tverdykh rastvorov soedinenii AIIIBV (Heterostructures Based on Quaternary and Quinary Solid Solutions of III–V Compounds), Rostov-on-Don: SKNTsVSh, 2003, p. 375.
Lozovskii, V.N., Lunin, L.S., and Popov, V.P., Zonnaya perekristallizatsiya gradientom temperatury poluprovodnikovykh materialov (Temperature-Gradient Zone Recrystallization of Semiconductor Materials), Moscow: Metallurgiya, 1987.
Lozovskii, V.N., Lunin, L.S., and Askaryan, T.A., Physicochemical equilibria in quinary systems of III–V compound semiconductors, Izv. Akad. Nauk SSSR, Neorg. Mater., 1989, vol. 25, no. 11, pp. 1778–1786.
Lozovskii, V.N., Lunin, L.S., and Askaryan, T.A., A method for calculating isoparametric compositions and the band gap of quinary solid solutions based on III–V compounds, Izv. Vyssh. Uchebn. Zaved., Fiz., 1989, no. 7, pp. 41–47.
Stringfellow, G.G., Calculation of energy gap in quaternary III/V alloys, J. Electron. Mater., 1981, vol. 10, no. 5, pp. 919–939.
Glisson, T.N., Hauser, J.S., Littlejoin, M.A., and Williams, C.K., Energy bandgap and lattice constant contours of III–V quaternary alloys, J. Electron. Mater., 1978, vol. 7, no. 1, pp. 1–16.
Lozovskii, V.N. and Lunin, L.S., Pyatikomponentnye tverdye rastvory soedinenii A3B5(novye materialy optoelektroniki) (Quinary Solid Solutions of III–V Compounds: Novel Optoelectronic Materials), Rostov-on-Don: SKNTs VSh, 1992.
Lozovskii, V.N., Lunin, L.S., and Askaryan, T.A., Lattice and thermal expansion matching in quinary heterostructures based on III–V compounds, Izv. Vyssh. Uchebn. Zaved., Fiz., 1989, no. 1, pp. 59–64.
Lozovskii, V.N., Lunin, L.S., and Askaryan, T.A., Thermodynamic analysis of the stability of quinary solid solutions of III–V compounds, Izv. Akad. Nauk SSSR, Neorg. Mater., 1989, vol. 25, no. 4, pp. 540–546.
Kuznetsov, V.V., Kognovitskaya, E.A., Lunina, M.L., and Rubtsov, E.R., Bismuth in quaternary and quinary solid solutions based on A3B5 compounds, Russ. J. Phys. Chem. A, 2011, vol. 85, no. 12, pp. 2062–2067.
Blagin, A.V., Barannik, A.A., Kireev, E.I., and Lunina, M.L., The kinetics of the crystallization in bismuth- containing heterosystems Al–In–Sb–Bi and Ga–As–P–Bi, Inorg. Mater., 2008, vol. 44, no. 12, pp. 1289–1292.
Sinel’nikov, B.M. and Lunina, M.L., GaxIn1–x-BiyAszSb1–y–z/InSb and InBiyAszSb1–y–z/InSb heterostructures grown in a temperature gradient, Inorg. Mater., 2012, vol. 48, no. 9, pp. 877–883.
Blagin, A.V., Valyukhov, D.P., Lunin, L.S., et al., Mass spectrometric study of GaInPAsSb/GaSb heterostructures, Inorg. Mater., 2008, vol. 44, no. 8, pp. 793–795.
Peka, G.P., Kovalenko, V.F., and Kutsenko, V.N., Lyuminestsentnye metody kontrolya parametrov poluprovodnikovykh materialov i priborov (Luminescence Techniques for Assessing Parameters of Semiconductor Materials and Devices), Kiev: Tekhnika, 1986.
Alfimova, D.L., Lunin, L.S., Lunina, M.L., Pashchenko, A.S., and Chebotarev, S.N., Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates, Phys. Solid State, 2016, vol. 58, no. 9, pp. 1751–1757.
Alfimova, D.L., Lunin, L.S., and Lunina, M.L., Growth and properties of GayIn1–yPzAs1–x–zBix solid solutions on GaP substrates, Inorg. Mater., 2014, vol. 50, no. 2, pp. 113–119.
Alfimova, D.L., Lunin, L.S., and Lunina, M.L., Influence of growth conditions on the surface quality and structural perfection of multicomponent heterostructures based on group A3B5 compounds, J. Surf. Invest: X-Ray, Synchrotron Neutron Tech., 2014, no. 3, pp. 612–621.
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Original Russian Text © D.L. Alfimova, L.S. Lunin, M.L. Lunina, A.E. Kazakova, A.S. Pashchenko, S.N. Chebotarev, 2017, published in Neorganicheskie Materialy, 2017, Vol. 53, No. 12, pp. 1245–1256.
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Alfimova, D.L., Lunin, L.S., Lunina, M.L. et al. Synthesis and properties of In x Al y Ga1–x–yP z As1–z/GaAs heterostructures. Inorg Mater 53, 1217–1227 (2017). https://doi.org/10.1134/S0020168517120019
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DOI: https://doi.org/10.1134/S0020168517120019