Abstract
Comparative experiments showed that the addition of chlorine at the preparation of the ZnS:Mn source materials for TFEL device fabrication can enhance grain growth in the ZnS:Mn films during post-deposition anneal. Correspondingly the luminescent properties of these films improved as compared to those without chlorine. Depending upon the Mn concen-tration and annealing temperature, both the saturation brightness and the peak luminous efficiency have increased by up to a factor of three. Optimized experimental para-meters resulted 810fL saturation brightness and 0.6l/W peak luminous efficiency. A practical significance is that useful TFEL devices can be fabricated using source materials with Cl, addition when post deposition annealing temperatures have to be kept low.
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Kun, Z.K., Leksell, D., Malmberg, P.R. et al. The influence of chlorine on the crystal structure and electroluminescent behavior of ZnS:Mn Films in thin film electroluminescent devices. J. Electron. Mater. 10, 287–300 (1981). https://doi.org/10.1007/BF02654913
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DOI: https://doi.org/10.1007/BF02654913