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Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices

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Abstract

Optimum conditions are reported for the growth of high-quality AlxGa1_xAs by means of vapor phase epitaxy from organometallic compounds (OMVPE). Typical values of mobili-ty and radiative recombination efficiency are reported, showing that OMVPE material quality is the same as that grown by liquid phase epitaxy (LPE). OMVPE-grown DH narrow-stripe lasers with Al.06Ga.94As active layers show minimum threshold currents of85 mÅ, comparable to the best lasers with similar structures produced by LPE.

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Authors and Affiliations

  1. Hewlett-Packard Laboratories, 1501 Page Mill Road, 94304, Palo Alto, CA

    E. E. Wagner, G. Horn & G. B. Stringfellow

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  1. E. E. Wagner
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  2. G. Horn
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  3. G. B. Stringfellow
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Wagner, E.E., Horn, G. & Stringfellow, G.B. Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices. J. Electron. Mater. 10, 239–253 (1981). https://doi.org/10.1007/BF02654911

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  • DOI: https://doi.org/10.1007/BF02654911

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