Abstract
High quality epitaxial layers of InxGa1−xAs (x = 0.53) were grown on semi-insulating (Fe-doped) (100) InP sub-strates. The layers were grown at a constant furnace temperature of 640°C by passing a direct electric current (0–10A/cm2) from the substrate to the melt. In order to minimize the out-diffusion of Fe atoms from the bulk of the substrate during the melt saturation, the substrate was kept at a cold temperature region (340°C) within the growth chamber and remotely loaded in the graphite boat just prior to the initiation of the growth cycle. In addition to pre-venting the out-diffusion of Fe atoms, this procedure sub-stantially reduced the thermal degradation of the InP sub-strate surface. The above technique produced high quality layers having uniform thickness and good surface morphology. A study of the dependence of growth rate on the applied current density yielded an average growth rate of 0.06µm/ A-min. Room temperature Hall measurements on layers grown by CCLPE resulted in Hall mobilities µ300 = 8900cm2/V-sec at a carrier concentration of 6.2 × l016cm−3. The improve-ment in the mobility achieved by the CCLPE technique is attributed to a reduced out-diffusion of scattering centers from the substrate into the growth layer, as well as to the higher quality of epitaxial layers normally achieved by CCLPE.
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Abul-Fadl, A., Stefanakos, E.K. & Collis, W.J. Current controlled liquid phase epitaxial (CCLPE) growth of InGaAs on (100) InP. J. Electron. Mater. 11, 559–573 (1982). https://doi.org/10.1007/BF02654689
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DOI: https://doi.org/10.1007/BF02654689