Skip to main content
SpringerLink
Log in

Defects in CdTe single crystals grown by very fast vapor growth technique

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Single crystals of CdTe were obtained by the very fast vapor growth technique. The four major defects, namely, multi-grains, lamellar, lateral, and micro-twins, which are fatal to the single crystallinity, were eliminated or limited by increasing the growth stability. This investigation indicates that the latent heat under high growth rate conditions should not be neglected. A model is developed to explain the effects of latent heat on the growth stability at the interface. A relationship between crystal morphologies and growth conditions was established. It strongly suggests that the above defects are growth stability related. The origin of twinning, dominated by growth stability, is discussed in this paper.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. H. Wiedemeier and G.H. Wu,J. Electron. Mater. 22, 1121 (1993).

    CAS  Google Scholar 

  2. H. Wiedemeier and G.H. Wu,J. Electron. Mater. 22, 1369 (1993).

    CAS  Google Scholar 

  3. H. Wiedemeier and Y.C. Bai,J. Electron. Mater. 19, 1373 (1990).

    Article  CAS  Google Scholar 

  4. H. Wiedemeier and G.H. Wu,J. Electron. Mater. 20, 891 (1991).

    CAS  Google Scholar 

  5. M. Inoue, I. Teramoto and S. Takayanagi,J. Appl. Phys. 33, 2578 (1962).

    Article  CAS  Google Scholar 

  6. K. Nakagawa, K. Maeda and S. Takeuchi,Appl. Phys. Lett. 34, 574 (1979).

    Article  CAS  Google Scholar 

  7. K. Durose and G.J. Russell,J. Cryst. Growth 101, 246 (1990).

    Article  CAS  Google Scholar 

  8. S.N. Zhao, C.Y. Yang, C. Huang and A.S. Yue,J. Cryst. Growth 65, 370 (1983).

    Article  CAS  Google Scholar 

  9. T.B. Reed and W.J. LaFleur,Appl. Phys. Lett. 5, 191 (1964).

    Article  CAS  Google Scholar 

  10. W. Palosz and H. Wiedemeier,J. Cryst. Growth 129, 653 (1993).

    Article  CAS  Google Scholar 

  11. A.W. Vere, S. Cole and D.J. Williams,J. Electron. Mater. 12, 551 (1983).

    Article  CAS  Google Scholar 

  12. M. Shibata, Y. Sasaki, T. Inada and S. Kuma,J. Cryst. Growth 102, 557 (1990).

    Article  CAS  Google Scholar 

  13. J. Katchi,J. Cryst. Growth 82,197 (1987).

    Article  Google Scholar 

Download references

Author information

Author notes

  1. G. H. Wu

    Present address: Institute of Physics, Chinese Academy of Sciences, Beijing, P.R. China

Authors and Affiliations

  1. Department of Chemistry, Rensselaer Polytechnic Institute, 12180, Troy, NY

    H. Wiedemeier & G. H. Wu

Authors
  1. H. Wiedemeier
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. H. Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wiedemeier, H., Wu, G.H. Defects in CdTe single crystals grown by very fast vapor growth technique. J. Electron. Mater. 24, 1007–1015 (1995). https://doi.org/10.1007/BF02652975

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02652975

Key words

Search

Navigation