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Target Laser Exposure of Partial CdTe/Si Dislocations at Low Temperature

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Abstract

The effect of pulsed laser exposure on electronic states formed by partial dislocation cores in cadmium telluride is demonstrated using in situ measurements of low-temperature (5 K) microphotoluminescence. It is shown that laser pulses 5 ns long with a wavelength of 1053 nm allows local transformation of dislocation cores, not affecting the surrounding unperturbed CdTe lattice.

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ACKNOWLEDGMENTS

The authors are grateful to the team of technologists of the Institute of Physico-Technical Problems, Siberian Branch of the Russian Academy of Science, for the samples put at their disposal.

Funding

This study was supported by the Russian Foundation for Basic Research, project no. 19-32-90176.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    S. I. Chentsov, V. S. Krivobok, S. N. Nikolaev, D. F. Aminev, E. E. Onishchenko & A. Yu. Klokov

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  1. S. I. Chentsov
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  2. V. S. Krivobok
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  3. S. N. Nikolaev
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  4. D. F. Aminev
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  5. E. E. Onishchenko
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  6. A. Yu. Klokov
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Correspondence to S. I. Chentsov.

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Translated by A. Kazantsev

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Chentsov, S.I., Krivobok, V.S., Nikolaev, S.N. et al. Target Laser Exposure of Partial CdTe/Si Dislocations at Low Temperature. Bull. Lebedev Phys. Inst. 49, 99–103 (2022). https://doi.org/10.3103/S1068335622040029

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  • DOI: https://doi.org/10.3103/S1068335622040029

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