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Determination of surface states distribution in a-Si:H using MOS tunnel Junctions

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Abstract

The measurement of the tunneling conductance and the ac conductance of a tunnelable MOS capacitor enables the determination of surface states distributions in semiconductors. Carrying out the measurement on hydrogenated amorphous silicon a-Si:H has revealed a non-uniform states distribution with a peak at about 0.45 eV below the conduction band edge. If the detected states are considered bulk states they appear to have a density of 1018 − 5×l018 cm−3 eV−1 at this peak. The agreement between the above results and states distributions obtained on a-Si:H alloys from other methods, and on materials prepared in various deposition systems, indicates that this peak is a universal property of these alloys. The latter conclusion is shown to be applicable for the determination of the doping efficiency in the alloys.

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References

  1. N.F. Mott and E.A. Davis,Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1971).

    Google Scholar 

  2. H. Fritzche inElectronic and Structural Properties of Amorphous Semiconductors, P.G. LeComber and J. Mort, eds. (Academic Press, London, 1973), p.55.

    Google Scholar 

  3. W.E. Spear, Adv. Phys.26, 811 (1977).

    Article  CAS  Google Scholar 

  4. M. Hirose, T. Suzuki and G.H. Döhler, Appl. Phys. Lett.34, 234 (1979).

    Article  CAS  Google Scholar 

  5. B.V. Roedern, L. Ley and M. Cardona, Solid State Commun.29, 415 (1979).

    Article  Google Scholar 

  6. C. Tsang and R.A. Street, Phys. Rev. B19, 3027 (1979).

    Article  CAS  Google Scholar 

  7. N.B.Goodman, H.Fritzsche and H.Ozaki, Proc.of the VIII Int.Conf.on Amorphous and Liquid Semiconductors, to be published in J.Non-Cryst. Solids.

  8. I. Solomon, T. Dietl and D. Kaplan, J.de physique39, 1241 (1978).

    CAS  Google Scholar 

  9. I.Balberg, Proc.of the VIII Int.Conf.on Amorphous and Liquid Semiconductors, to be published in J.Non-Cryst. Solids.

  10. I.Balberg, J.J.Hanak and H.A.Weakliem, to be published.

  11. S.M. Sze,Physics of Semiconductor Devices (John Wiley & Sons.Inc, New York, 1969), Chap. 9.

    Google Scholar 

  12. A.S. Grove,Physics and Technology of Semiconductor Devices (John Wiley & Sons,Inc. New York, 1967).

    Google Scholar 

  13. A. Many, Y. Goldstein and N.B. Grover,Semiconductor Surfaces (North-Holland Publishing Co., Amsterdam, 1965).

    Google Scholar 

  14. A. Many, Surface Science1, 447 (1975).

    CAS  Google Scholar 

  15. A. Goetzberger, E. Klausmann and M.J. Schultz, CRC Critical Reviews in Solid State Sciences6, 1 (1976).

    Article  CAS  Google Scholar 

  16. J.A. Appelbaum, D.R. Hamann and K.H. Tasso, Phys.Rev.Lett.39 1487 (1977).

    Article  CAS  Google Scholar 

  17. E.H. Nicollian and A. Goetzberger, Bell Syst.Tech.J.46, 1055 (1966).

    Google Scholar 

  18. C.N.Berglund,IEEE Trans.Electron DevicesED-13,701(1966).

    Google Scholar 

  19. J. Shewchun, A. Waxman and G. Warfield,Solid State Electron.10, 1165, 1187 (1967).

    Article  Google Scholar 

  20. L.B. Freeman and W.E. Dahlke, Solid State Electron.13, 1483 (1970).

    Article  Google Scholar 

  21. A.R. Clarke and J. Shewchun, Solid State Electron,14, 957 (1971).

    Article  CAS  Google Scholar 

  22. T.P. Ma and R.C. Barker, Solid State Electron.17, 913 (1974).

    Article  CAS  Google Scholar 

  23. W.E. Dahlke and S.M. Sze, Solid State Electron.10, 865 (1967).

    Article  CAS  Google Scholar 

  24. V. Kumar and W.E. Dahlke,Solid State Electron.20, 142 (1977).

    Google Scholar 

  25. I. Balberg and D.E. Carlson, Phys.Rev.Lett.43, 58 (1979).

    Article  CAS  Google Scholar 

  26. A. Madan and P.G. LeComber, Proc. VII Int’l Conf. on Amorphous and Liquid Semiconductors, edited by W.E. Spear (G.G.Stevenson, Dundee, Scotland, 1977). p.377.

    Google Scholar 

  27. I.Balberg, to be published.

  28. K. Yamashita, H. Fujiyasu, I. Kabayashi and S. Itoh, Japan J. Appl. Phys.13, 290 (1974).

    Article  CAS  Google Scholar 

  29. The author is indebted to D.L.Staebler and G.R.Latham for the measurements of the conductivity activation energy and the thermoelectric power.

  30. It has been pointed out that the actual resistivity of undoped a-Si:H may be larger than the measured resistivity (see Ref. 8).

  31. J. Shewchun and A. Waxman, Rev.Sci.Instrum.37,1195(1966).

    Article  CAS  Google Scholar 

  32. Y.K. Chan and T.S. Jayadevaiah,Phys.Stat.Sol.(a)24, K177 (1974).

    Article  CAS  Google Scholar 

  33. S.R. Ovshinsky and A. Madan, Nature276, 482 (1978).

    Article  CAS  Google Scholar 

  34. M. Brodsky and D. Kaplan, J. Non-Cryst. Solids32, 431 (1979).

    Article  CAS  Google Scholar 

  35. C.H. Seager and D.S. Ginley, Appl.Phys. Lett.34, 337 (1979).

    Article  CAS  Google Scholar 

  36. M.A. Paesler, D.A. Anderson, E.C. Freeman, G. Moddel and W. Paul, Phys. Rev. Lett.41, 1492 (1978).

    Article  CAS  Google Scholar 

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  1. I. Balberg

    Present address: The Racah Institute of Physics, The Hebrew University, 91000, Jerusalem, Israel

Authors and Affiliations

  1. RCA Laboratories, 08540, Princeton, New Jersey

    I. Balberg

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  1. I. Balberg
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Balberg, I. Determination of surface states distribution in a-Si:H using MOS tunnel Junctions. J. Electron. Mater. 9, 797–818 (1980). https://doi.org/10.1007/BF02652897

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  • DOI: https://doi.org/10.1007/BF02652897

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