Abstract
A measuring system for current deep-level transient spectroscopy of semiconductor diode structures is described. Its distinguishing feature is the ability to measure several relaxation currents (up to eight current dependences for one temperature scanning) at different regimes of deep-level recharging. The structural features of the system for measuring and analyzing the temperature dependence of the relaxation current in semiconductor structures are described.
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Original Russian Text © A.V. Ermachikhin, V.G. Litvinov, 2018, published in Pribory i Tekhnika Eksperimenta, 2018, No. 2, pp. 118–123.
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Ermachikhin, A.V., Litvinov, V.G. An Automated Measuring System for Current Deep-Level Transient Spectroscopy. Instrum Exp Tech 61, 277–282 (2018). https://doi.org/10.1134/S0020441218020021
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DOI: https://doi.org/10.1134/S0020441218020021