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Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate

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Abstract

In this article, β-Ga2O3 film was deposited on the p-Si (100) substrate using pulsed laser deposition (PLD) technique for rapidly emerging Ga2O3-based Schottky barrier diodes (SBDs). Although X-ray diffraction (XRD) result reveals a polycrystalline trending film, a smooth and uniform as-grown surface has been characterized by atomic force microscope (AFM) and field-emission scanning electron microscope (FESEM). Further, we have investigated metal–semiconductor (M–S) contact behavior of the fully vertical SBDs with the four different metals such as aluminum (Al), silver (Ag), gold (Au), and platinum (Pt) on Ga2O3 after forming ohmic contacts on the backside of the Si substrate. The barrier heights of all four metals are typically in the range of 0.51–0.69 eV and 0.72–1.41 eV as obtained from the current–voltage (I–V) and capacitance–voltage (C–V) characteristics, respectively. The carrier concentration is ~ 1016 cm−3 as calculated using C–V characteristics. The power device indices, namely breakdown voltage (VBR) of 19, 26, 90, and 99 V and the on-state resistance (RON) values ~ 19.82, 149.19, 7.45 and 156.25 Ω cm2 are also obtained for the Al/Ga2O3, Ag/Ga2O3, Au/Ga2O3, and Pt/Ga2O3 diodes, respectively. The Baliga Figure of Merits (V2BR/RON) for the Au/Ga2O3 diode is found out to be the highest (90.73 W cm−2). As the SBDs are fabricated on n-Ga2O3/p-Si heterojunction, it is expected to have two back-to-back diodes in the device structure. However, non-existence of back-to-back diodes has been confirmed by temperature dependence I–V characteristics due to possible Poole–Frenkel (P–F) tunneling at the Ga2O3/Si heterojunction.

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Acknowledgements

The authors would like to acknowledge Centre for Design and Fabrication of Electronic Devices (C4DFED), Advanced Material Research Centre (AMRC), and Nanoscale Materials & Devices Lab, IIT Mandi for the partial characterization and fabrication facilities. We would also like to thank SERB, DST (ECR/2017/000810) and SPARC, MHRD, (P1456) Govt. of India for funding the projects.

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  1. School of Computing & Electrical Engineering, Indian Institute of Technology Mandi, Mandi, H.P., 175005, India

    Manoj K. Yadav, Satinder K. Sharma & Ankush Bag

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  1. Manoj K. Yadav
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Yadav, M.K., Sharma, S.K. & Bag, A. Evaluation of diode characteristics for fully vertical β-Ga2O3 on silicon (100) substrate. J Mater Sci: Mater Electron 31, 13845–13856 (2020). https://doi.org/10.1007/s10854-020-03944-0

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