Abstract
A method using a H2/AsH3 plasma to clean the Si surface before GaAs heteroepitaxy was investigated and the dependence of the effectiveness of this treatment on arsine partial pressure was studied. Thin GaAs-on-Si films deposited on the plasma-cleaned Si were analyzed using plan-view TEM, HRXTEM and SIMS. Although not optimized, this method of Si cleaning makes heteroepitaxial deposition of GaAs possible. Some roughening of the Si surface was observed and a possible explanation is offered. Using the results of this study, thick (2.5–3.0μm) epitaxial GaAs films were then deposited and their quality was evaluated using RBS, XTEM and optical Nomarski observation. All Si surface cleaning and GaAs deposition were carried out at temperatures at or below 650°.
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Yoon, E., Parris, P. & Reif, R. Low temperature cleaning of Si by a H2/AsH3 plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD). J. Electron. Mater. 19, 337–343 (1990). https://doi.org/10.1007/BF02651294
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DOI: https://doi.org/10.1007/BF02651294